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We work out a theory of shot noise in a special case. This is a noise of the Coulomb drag current excited under the ballistic transport regime in a one-dimensional nanowire by a ballistic non-Ohmic current in a nearby parallel nanowire. We predict sharp oscillation of the noise power as a function of gate voltage or the chemical potential of electrons. We also study dependence of the noise on the voltage V across the driving wire. For relatively large values of V the noise power is proportional to V^2.
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We observe the suppression of the finite frequency shot-noise produced by a voltage biased tunnel junction due to its interaction with a single electromagnetic mode of high impedance. The tunnel junction is embedded in a quarter wavelength resonator containing a dense SQUID array providing it with a characteristic impedance in the kOhms range and a resonant frequency tunable in the 4-6 GHz range. Such high impedance gives rise to a sizeable Coulomb blockade on the tunnel junction (roughly 30% reduction in the differential conductance) and allows an efficient measurement of the spectral density of the current fluctuations at the resonator frequency. The observed blockade of shot-noise is found in agreement with an extension of the dynamical Coulomb blockade theory.
We consider the fluctuations of the electrical current (shot noise) in the presence of a voltage time-modulation. For a non-interacting metal, it is known that the derivative of the photo-assisted noise has a staircase behavior. In the presence of Coulomb interactions, we show that the photo-assisted noise presents a more complex profile, in particular for the two following systems: 1) a two-dimensional electron gas in the fractional quantum Hall regime for which we have obtained evenly spaced singularities in the noise derivative, with a spacing related to the filling factor and, 2) a carbon nanotube for which a smoothed staircase in the noise derivative is obtained.
We report the theoretical investigation of noise spectrum of spin current and spin transfer torque for non-colinear spin polarized transport in a spin-valve device which consists of normal scattering region connected by two ferromagnetic electrodes. Our theory was developed using non-equilibrium Greens function method and general non-linear $S^sigma-V$ and $S^tau-V$ relations were derived as a function of angle $theta$ between magnetization of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that for the MNM system, the auto-correlation of spin current is enough to characterize the fluctuation of spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of spin current are needed to characterize the noise spectrum of spin current. Furthermore, the spin transfer torque and the torque noise were studied for the MNM system. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to $sintheta$ when the system is far away from the resonance. When the system is near the resonance, the spin transfer torque becomes non-sinusoidal function of $theta$. The derivative of noise spectrum of spin transfer torque with respect to the bias voltage $N_tau$ behaves differently when the system is near or far away from the resonance. Specifically, the differential shot noise of spin transfer torque $N_tau$ is a concave function of $theta$ near the resonance while it becomes convex function of $theta$ far away from resonance. For certain bias voltages, the period $N_tau(theta)$ becomes $pi$ instead of $2pi$. For small $theta$, it was found that the differential shot noise of spin transfer torque is very sensitive to the bias voltage and the other system parameters.
Recent years have seen a surge of interest in studies of hydrodynamic transport in electronic systems. We investigate the electron viscosity of metals and find a new component that is closely related to Coulomb drag. Using the linear response theory, viscosity, a transport coefficient for momentum, can be extracted from the retarded correlation function of the momentum flux, i.e., the stress tensor. There exists a previously overlooked contribution to the shear viscosity from the interacting part of the stress tensor which accounts for the momentum flow induced by interactions. This contribution, which we dub drag viscosity, is caused by the frictional drag force due to long-range interactions. It is therefore linked to Coulomb drag which also originates from the interaction induced drag force. Starting from the Kubo formula and using the Keldysh technique, we compute the drag viscosity of 2D and 3D metals along with the drag resistivity of double-layer 2D electronic systems. Both the drag resistivity and drag viscosity exhibit a crossover from quadratic-in-T behavior at low temperatures to a linear one at higher temperatures. Although the drag viscosity appears relatively small compared with the normal Drude component for the clean metals, it may dominate hydrodynamic transport in some systems, which are discussed in the conclusion.
Using a novel structure, consisting of two, independently contacted graphene single layers separated by an ultra-thin dielectric, we experimentally measure the Coulomb drag of massless fermions in graphene. At temperatures higher than 50 K, the Coulomb drag follows a temperature and carrier density dependence consistent with the Fermi liquid regime. As the temperature is reduced, the Coulomb drag exhibits giant fluctuations with an increasing amplitude, thanks to the interplay between coherent transport in the graphene layer and interaction between the two layers.
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