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In-plane electric field induced exciton dissociation in two dimensional transition metal dichalcogenides

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 Added by Tao Zhu
 Publication date 2021
  fields Physics
and research's language is English




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We present a theoretical study of the in-plane electric filed induced exciton dissociation in two dimensional (2D) transition metal dichcogenides MX$_2$ (M=Mo, W; X=S, Se). The exciton resonance states are determined from continuum states by the complex coordinate rotation method with the Lagrange mesh method to solve the exciton Hamiltonian. Our results show that the exciton dissociation process can be effectively controlled by the electric field. The critical electric fields needed for ground state exciton to make the dissociation process dominating over combination processes is in the range of 73 - 91 V/$mu$m for monolayer MX$_2$. Compared with ground state exciton, the excited excitons are more easily to be dissociated due to their delocalization nature, e.g. the critical field for 2$s$ excited state is as low as 12 - 16 V/$mu$m . More importantly, we found that exciton become more susceptive to external electric field and a much smaller critical electric field is needed in the presence of a dielectric substrate and in finite-layer MX$_2$. This work may provide a promising way to enhance the exciton dissociation process and improve the performance of 2D materials based optoelectronic devices.



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Monolayers of transition metal dichalcogenides (TMDs) have been established in the last years as promising materials for novel optoelectronic devices. However, the performance of such devices is often limited by the dissociation of tightly bound excitons into free electrons and holes. While previous studies have investigated tunneling at large electric fields, we focus in this work on phonon-assisted exciton dissociation that is expected to be the dominant mechanism at small fields. We present a microscopic model based on the density matrix formalism providing access to time- and momentum-resolved exciton dynamics including phonon-assisted dissociation. We track the pathway of excitons from optical excitation via thermalization to dissociation, identifying the main transitions and dissociation channels. Furthermore, we find intrinsic limits for the quantum efficiency and response time of a TMD-based photodetector and investigate their tunability with externally accessible knobs, such as excitation energy, substrate screening, temperature and strain. Our work provides microscopic insights in fundamental mechanisms behind exciton dissociation and can serve as a guide for the optimization of TMD-based optoelectronic devices.
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