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Register a new userExciton Relaxation Cascade in Two-dimensional Transition-metal dichalcogenides
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Monolayers of transition-metal dichalcogenides (TMDs) are characterized by an extraordinarily strong Coulomb interaction giving rise to tightly bound excitons with binding energies of hundreds of meV. Excitons dominate the optical response as well as the ultrafast dynamics in TMDs. As a result, a microscopic understanding of exciton dynamics is the key for technological application of these materials. In spite of this immense importance, elementary processes guiding the formation and relaxation of excitons after optical excitation of an electron-hole plasma has remained unexplored to a large extent. Here, we provide a fully quantum mechanical description of momentum- and energy-resolved exciton dynamics in monolayer molybdenum diselenide (MoSe$_2$) including optical excitation, formation of excitons, radiative recombination as well as phonon-induced cascade-like relaxation down to the excitonic ground state. Based on the gained insights, we reveal experimentally measurable features in pump-probe spectra providing evidence for the exciton relaxation cascade.
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We present a theoretical study of the in-plane electric filed induced exciton dissociation in two dimensional (2D) transition metal dichcogenides MX$_2$ (M=Mo, W; X=S, Se). The exciton resonance states are determined from continuum states by the complex coordinate rotation method with the Lagrange mesh method to solve the exciton Hamiltonian. Our results show that the exciton dissociation process can be effectively controlled by the electric field. The critical electric fields needed for ground state exciton to make the dissociation process dominating over combination processes is in the range of 73 - 91 V/$mu$m for monolayer MX$_2$. Compared with ground state exciton, the excited excitons are more easily to be dissociated due to their delocalization nature, e.g. the critical field for 2$s$ excited state is as low as 12 - 16 V/$mu$m . More importantly, we found that exciton become more susceptive to external electric field and a much smaller critical electric field is needed in the presence of a dielectric substrate and in finite-layer MX$_2$. This work may provide a promising way to enhance the exciton dissociation process and improve the performance of 2D materials based optoelectronic devices.
Transition metal dichalcogenides (TMDCs) have emerged as a new two dimensional materials field since the monolayer and few-layer limits show different properties when compared to each other and to their respective bulk materials. For example, in some cases when the bulk material is exfoliated down to a monolayer, an indirect-to-direct band gap in the visible range is observed. The number of layers $N$ ($N$ even or odd) drives changes in space group symmetry that are reflected in the optical properties. The understanding of the space group symmetry as a function of the number of layers is therefore important for the correct interpretation of the experimental data. Here we present a thorough group theory study of the symmetry aspects relevant to optical and spectroscopic analysis, for the most common polytypes of TMDCs, i.e. $2Ha$, $2Hc$ and $1T$, as a function of the number of layers. Real space symmetries, the group of the wave vectors, the relevance of inversion symmetry, irreducible representations of the vibrational modes, optical selection rules and Raman tensors are discussed.
This paper presents a theoretical description of both the valley Zeeman effect (g-factors) and Landau levels in two-dimensional H-phase transition metal dichalcogenides (TMDs) using the Luttinger-Kohn approximation with spin-orbit coupling. At the valley extrema in TMDs, energy bands split into Landau levels with a Zeeman shift in the presence of a uniform out-of-plane external magnetic field. The Landau level indices are symmetric in the $K$ and $K$ valleys. We develop a numerical approach to compute the single band g-factors from first principles without the need for a sum over unoccupied bands. Many-body effects are included perturbatively within the GW approximation. Non-local exchange and correlation self-energy effects in the GW calculations increase the magnitude of single band g-factors compared to those obtained from density functional theory. Our first principles results give spin- and valley-split Landau levels, in agreement with recent optical experiments. The exciton g-factors deduced in this work are also in good agreement with experiment for the bright and dark excitons in monolayer WSe$_2$, as well as the lowest-energy bright excitons in MoSe$_2$-WSe$_2$ heterobilayers with different twist angles.
Strain in two-dimensional (2D) transition metal dichalcogenide (TMD) has led to localized states with exciting optical properties, in particular in view of designing one photon sources. The naturally formed of the MoS2 monolayer deposed on hBN substrate leads to a reduction of the bandgap in the strained region creating a nanobubble. The photogenerated particles are thus confined in the strain-induced potential. Using numerical diagonalization, we simulate the spectra of the confined exciton states, their oscillator strengths and radiative lifetimes. We show that a single state of the confined exciton is optically active, which suggests that the MoS2/hBN nanobubble is a good candidate for the realisation of single-photon sources. Furthermore, the exciton binding energy, oscillator strength and radiative lifetime are enhanced due to the confinement effect.
The usage of molten salts, e.g., Na2MoO4 and Na2WO4, has shown great success in the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). In comparison with the halide salt (i.e., NaCl, NaBr, KI)-assisted growth (Salt 1.0), the molten salt-assisted vapor-liquid-solid (VLS) growth technique (Salt 2.0) has improved the reproducibility, efficiency and scalability of synthesizing 2D TMDCs. However, the growth of large-area MoSe2 and WTe2 is still quite challenging with the use Salt 2.0 technique. In this study, a renewed Salt 2.0 technique using mixed salts (e.g., Na2MoO4-Na2SeO3 and Na2WO4-Na2TeO3) is developed for the enhanced CVD growth of 2D MoSe2 and WTe2 crystals with large grain size and yield. Continuous monolayer MoSe2 film with grain size of 100-250 {mu}m or isolated flakes up to ~ 450 {mu}m is grown on a halved 2-inch SiO2/Si wafer. Our study further confirms the synergistic effect of Na+ and SeO32- in the enhanced CVD growth of wafer-scale monolayer MoSe2 film. And thus, the addition of Na2SeO3 and Na2TeO3 into the transition metal salts could be a general strategy for the enhanced CVD growth of many other 2D selenides and tellurides.
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