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Register a new userRectification in a Eu-chalcogenide-based superconducting diode
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Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel diode based on the strong spin filtering and splitting generated by an EuS thin film between a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tunnel junction achieves a large rectification (up to $sim40$%) already for a small voltage bias ($sim 200$ $mu$V) thanks to the small energy scale of the system: the Al superconducting gap. With the help of an analytical theoretical model we can link the maximum rectification to the spin polarization of the barrier and describe the quasi-ideal Schottky-diode behavior of the junction. This cryogenic spintronic rectifier is promising for the application in highly-sensitive radiation detection for which two different configurations are evaluated. In addition, the superconducting diode may pave the way for future low-dissipation and fast superconducting electronics.
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Stimulated by the recent experiment [F. Ando et al., Nature 584, 373 (2020)], we propose an intrinsic mechanism to cause the superconducting diode effect (SDE). SDE refers to the nonreciprocity of the critical current for the metal-superconductor transition. Among various mechanisms for the critical current, the depairing current is known to be intrinsic to each material and has recently been observed in several superconducting systems. We clarify the temperature scaling of the nonreciprocal depairing current near the critical temperature and point out its significant enhancement at low temperatures. It is also found that the nonreciprocal critical current shows sign reversals upon increasing the magnetic field. These behaviors are understood by the nonreciprocity of the Landau critical momentum and the crossover of the helical superconductivity. The intrinsic SDE unveils the rich phase diagram and functionalities of noncentrosymmetric superconductors.
In this work, we review and expand recent theoretical proposals for the realization of electronic thermal diodes based on tunnel-junctions of normal metal and superconducting thin films. Starting from the basic rectifying properties of a single hybrid tunnel junction, we will show how the rectification efficiency can be largely increased by combining multiple junctions in an asymmetric chain of tunnel-coupled islands. We propose three different designs, analyzing their performance and their potential advantages. Besides being relevant from a fundamental physics point of view, this kind of devices might find important technological application as fundamental building blocks in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.
Recent experiments with electrolytes driven through conical nanopores give evidence of strong rectified current response. In such devices, the asymmetry in the confinement is responsible of the non-Ohmic response, suggesting that the interplay of entropic and enthalpic forces plays a major role. Here we propose a theoretical model to shed light on the physical mechanism underlying ionic current rectification (ICR). By use of an effective description of the ionic dynamics we explore the systems response in different electrostatic regimes. We show that the rectification efficiency, as well as the channel selectivity, is driven by the surface-to-bulk conductivity ratio Dukhin length rather than the electrical double layer overlap.
A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralow power consumption. However, realizing a superconducting diode is fundamentally and technologically challenging, as it usually requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we demonstrate a superconducting diode achieved in a conventional superconducting film patterned with a conformal array of nanoscale holes, which breaks the spatial inversion symmetry. We showcase the superconducting diode effect through switchable and reversible rectification signals, which can be three orders of magnitude larger than that from a flux-quantum diode. The introduction of conformal potential landscapes for creating a superconducting diode is thereby proven as a convenient, tunable, yet vastly advantageous tool for superconducting electronics. This could be readily applicable to any superconducting materials, including cuprates and iron-based superconductors that have higher transition temperatures and are desirable in device applications.
A pronounced local in-gap zero-energy bound state (ZBS) has been observed by recent scanning tunneling microscopy (STM) experiments on the interstitial Fe impurity (IFI) and its nearest-neighboring (nn) sites in $mathrm{FeTe_{0.5}Se_{0.5}}$ superconducting (SC) compound. By introducing a new impurity mechanism, the so-called tunneling impurity, and based on the Bogoliubove-de Gennes (BDG) equations we investigated the low-lying energy states of the IFI and the underlying Fe-plane. We found the peak of ZBS does not shift or split in a magnetic field as long as the tunneling parameter between IFI and the Fe-plane is sufficiently small and the Fe-plane is deep in the SC state. Our results are in good agreement with the experiments. We also predicted that modulation of spin density wave (SDW), or charge density wave (CDW) will suppress the intensity of the ZBS.
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