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Register a new userElectronic heat current rectification in hybrid superconducting devices
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In this work, we review and expand recent theoretical proposals for the realization of electronic thermal diodes based on tunnel-junctions of normal metal and superconducting thin films. Starting from the basic rectifying properties of a single hybrid tunnel junction, we will show how the rectification efficiency can be largely increased by combining multiple junctions in an asymmetric chain of tunnel-coupled islands. We propose three different designs, analyzing their performance and their potential advantages. Besides being relevant from a fundamental physics point of view, this kind of devices might find important technological application as fundamental building blocks in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.
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We report the realization of an ultra-efficient low-temperature hybrid heat current rectifier, thermal counterpart of the well-known electric diode. Our design is based on a tunnel junction between two different elements: a normal metal and a superconducting island. Electronic heat current asymmetry in the structure arises from large mismatch between the thermal properties of these two. We demonstrate experimentally temperature differences exceeding $60$ mK between the forward and reverse thermal bias configurations. Our device offers a remarkably large heat rectification ratio up to $sim 140$ and allows its prompt implementation in true solid-state thermal nanocircuits and general-purpose electronic applications requiring energy harvesting or thermal management and isolation at the nanoscale.
Short review on advanced superconducting circuits and devices.
We study theoretically the contribution of fluctuating Cooper pairs to the persistent current in superconducting rings threaded by a magnetic flux. For sufficiently small rings, in which the coherence length $xi$ exceeds the radius $R$, mean field theory predicts a full reduction of the transition temperature to zero near half-integer flux. We find that nevertheless a very large current is expected to persist in the ring as a consequence of Cooper pair fluctuations that do not condense. For larger rings with $Rgg xi$ we calculate analytically the susceptibility in the critical region of strong fluctuations and show that it reflects competition of two interacting complex order parameters.
This PhD thesis is divided in 6 chapters. In chapter 1 we introduce basic superconducting phenomena. Such as, the BCS theory, the Andreev reflection and the proximity effect, and the charge current transport in superconducting tunnel junctions. In chapter 2 we present the Keldysh nonequilibrium Green function formalism used to obtain the results of this thesis, together with clarifying examples corresponding to simple junctions. In chapter 3, the subgap transport properties of a SIF structure are studied. We devote chapter 4 to the study of thermal transport in superconducting nanohybrid structures. In chapter 5, we develop a general theory for the microwave-irradiated high-transmittance superconducting quantum point contact (SQPC), which consists of a thin constriction of superconducting material in which the Andreev states can be observed. The thesis concludes with a summary of the obtained results in chapter 6. The detailed derivation of the quasiclassical equations is presented in the appendix.
We discuss heat transport in a thermally-biased SQUID in the presence of an external magnetic flux, when a non-negligible inductance of the SQUID ring is taken into account. A properly sweeping driving flux causes the thermal current to modulate and behave hysteretically. The response of this device is analysed as a function of both the hysteresis parameter and degree of asymmetry of the SQUID, highlighting the parameter range over which hysteretic behavior is observable. Markedly, also the temperature of the SQUID shows hysteretic evolution, with sharp transitions characterized by temperature jumps up to, e.g., ~ 38mK for a realistic Al-based setup. In view of these results, the proposed device can effectively find application as a temperature-based superconducting memory element, working even at GHz frequencies by suitably choosing the superconductor on which the device is based.
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