No Arabic abstract
A merged-element transmon (MET) device, based on Si fins, is proposed and the steps to form such a FinMET are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, lossy Al2O3, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses; (2) minimizing the formation of two-level system spectral features; (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) reducing the footprint by four orders of magnitude; and (5) allowing scalable fabrication. Here, fabrication of Si fins on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. The formation of FinMET devices is expected to allow tunnel junction patterning with optical lithography. This facilitates uniform fabrication on Si wafers based on existing infrastructure for fin-based devices while simultaneously avoiding lossy amorphous dielectrics for tunnel barriers.
We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and simpler fabrication than conventional transmons. Because it concentrates the electromagnetic energy inside the junction, it reduces relative electric field participation from other interfaces. By combining micrometer-scale Al/AlOx/Al junctions with long oxidations and novel processing, we have produced functional devices with $E_{J}$/$E_{C}$ in the low transmon regime ($E_{J}$/$E_{C}$ $lesssim$30). Cryogenic I-V measurements show sharp dI/dV structure with low sub-gap conduction. Qubit spectroscopy of tunab
Circuit quantum electrodynamics systems are typically built from resonators and two-level artificial atoms, but the use of multi-level artificial atoms instead can enable promising applications in quantum technology. Here we present an implementation of a Josephson junction circuit dedicated to operate as a V-shape artificial atom. Based on a concept of two internal degrees of freedom, the device consists of two transmon qubits coupled by an inductance. The Josephson nonlinearity introduces a strong diagonal coupling between the two degrees of freedom that finds applications in quantum non-demolition readout schemes, and in the realization of microwave cross-Kerr media based on superconducting circuits.
The implementation of quantum networks involving quantum memories and photonic channels without the need for cryogenics would be a major technological breakthrough. Nitrogen-vacancy centers have excellent spin properties even at room temperature, but phonon-induced broadening makes it challenging to interface these spins with photons at non-cryogenic temperatures. Inspired by recent progress in achieving ultra-high mechanical quality factors, we propose that this challenge can be overcome by spin-opto-mechanical transduction. We quantify the coherence of the interface by calculating the indistinguishability of the emitted photons and describe promising paths towards experimental implementation.
Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths of 2-16 $mu textrm{m}$ to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally-evaporated $approx 1 mu textrm{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2times10^{-6}$ and, $9 mu textrm{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single photon loss tangent of $0.6-2times 10^{-5}$. Interface contamination limits the loss in these devices.
We present an experimental study of nanowire transmons at zero and applied in-plane magnetic field. With Josephson non-linearities provided by the nanowires, our qubits operate at higher magnetic fields than standard transmons. Nanowire transmons exhibit coherence up to 70 mT, where the induced superconducting gap in the nanowire closes. We demonstrate that on-chip charge noise coupling to the Josephson energy plays a dominant role in the qubit dephasing. This takes the form of strongly-coupled two-level systems switching on 100 ms timescales and a more weakly coupled background producing $1/f$ noise. Several observations, including the field dependence of qubit energy relaxation and dephasing, are not fully understood, inviting further experimental investigation and theory. Using nanowires with a thinner superconducting shell will enable operation of these circuits up to 0.5 T, a regime relevant for topological quantum computation.