Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOptoelectrical nanomechanical resonators made from multilayered 2D materials
85
0
0.0
(
0
)
Authors
Joshoua Condicion Esmenda
Ask ChatGPT about the research
No Arabic abstract
Studies involving nanomechanical motion have evolved from its detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. Nanomechanical resonators indispensable role as transducers between optical and microwave fields in hybrid systems, such as quantum communications interface, have elevated their importance in recent years. It is therefore crucial to determine which among the family of nanomechanical resonators is more suitable for this role. Most of the studies revolve around nanomechanical resonators of ultrathin structures because of their inherently large mechanical amplitude due to their very low mass. Here, we argue that the underutilized nanomechanical resonators made from multilayered two-dimensional (2D) materials are the better fit for this role because of their comparable electrostatic tunability and larger optomechanical responsivity. To show this, we first demonstrate the electrostatic tunability of mechanical modes of a multilayered nanomechanical resonator made from graphite. We also show that the optomechanical responsivity of multilayered devices will always be superior as compared to the few-layer devices. Finally, by using the multilayered model and comparing this device with the reported ones, we find that the electrostatic tunability of devices of intermediate thickness is not significantly lower than that of ultrathin ones. Together with the practicality in terms of fabrication ease and design predictability, we contend that multilayered 2D nanomechanical resonators are the optimal choice for the electromagnetic interface in integrated quantum systems.
rate research
Read More
We study resonant response of an underdamped nanomechanical resonator with fluctuating frequency. The fluctuations are due to diffusion of molecules or microparticles along the resonator. They lead to broadening and change of shape of the oscillator spectrum. The spectrum is found for the diffusion confined to a small part of the resonator and where it occurs along the whole nanobeam. The analysis is based on extending to the continuous limit, and appropriately modifying, the method of interfering partial spectra. We establish the conditions of applicability of the fluctuation-dissipation relations between the susceptibility and the power spectrum. We also find where the effect of frequency fluctuations can be described by a convolution of the spectra without these fluctuations and with them as the only source of the spectral broadening.
We have developed capacitively-transduced nanomechanical resonators using sp$^2$-rich diamond-like carbon (DLC) thin films as conducting membranes. The electrically conducting DLC films were grown by physical vapor deposition at a temperature of $500{,,}^circ$C. Characterizing the resonant response, we find a larger than expected frequency tuning that we attribute to the membrane being buckled upwards, away from the bottom electrode. The possibility of using buckled resonators to increase frequency tuning can be of advantage in rf applications such as tunable GHz filters and voltage-controlled oscillators.
State of the art nanomechanical resonators present quality factors Q ~ 10^3 - 10^5, which are much lower than those that can be naively extrapolated from the behavior of micromechanical resonators. We analyze the dissipation mechanism that arises in nanomechanical beam-structures due to the tunneling of mesoscopic phonons between the beam and its supports (known as clamping losses). We derive the environmental force spectral density that determines the quantum Brownian motion of a given resonance. Our treatment is valid for low frequencies and provides the leading contribution in the aspect ratio. This yields fundamental limits for the Q-values which are described by simple scaling laws and are relevant for state of the art experimental structures. In this context, for resonant frequencies in the 0.1-1GHz range, while this dissipation mechanism can limit flexural resonators it is found to be negligible for torsional ones. In the case of structureless 3D supports the corresponding environmental spectral densities are Ohmic for flexural resonators and super-Ohmic for torsional ones, while for 2D slab supports they yield 1/f noise. Furthermore analogous results are established for the case of suspended semiconducting single-walled carbon nanotubes. Finally, we provide a general expression for the spectral density that allows to extend our treatment to other geometries and illustrate its use by applying it to a microtoroid. Our analysis is relevant for applications in high precision measurements and for the prospects of probing quantum effects in a macroscopic mechanical degree of freedom.
Spin-mechanics studies interactions between spin systems and mechanical vibrations in a nanomechanical resonator and explores their potential applications in quantum information processing. In this tutorial, we summarize various types of spin-mechanical resonators and discuss both the cavity-QED-like and the trapped-ion-like spin-mechanical coupling processes. The implementation of these processes using negatively charged nitrogen vacancy and silicon vacancy centers in diamond is reviewed. Prospects for reaching the full quantum regime of spin-mechanics, in which quantum control can occur at the level of both single spin and single phonon, are discussed with an emphasis on the crucial role of strain coupling to the orbital degrees of freedom of the defect centers.
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
