No Arabic abstract
We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonances have been extracted, showing that 5% of the resonances are within 1 GHz of our electrically detected resonances and that the optical lifetimes range from 0.5 ms up to 1.5 ms. We observed inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 1.4 MHz and 0.75 MHz for two separate resonances, which is a reduction of more than an order of magnitude observed to date. These narrow optical transition properties show that Er in Si is an excellent candidate for future quantum information and communication applications.
We report 100% duty cycle generation of sub-MHz single photon pairs at the Rubidium D$_1$ line using cavity-enhanced spontaneous parametric downconversion. The temporal intensity crosscorrelation function exhibits a bandwidth of $666 pm 16$ kHz for the single photons, an order of magnitude below the natural linewidth of the target transition. A half-wave plate inside our cavity helps to achieve triple resonance between pump, signal and idler photon, reducing the bandwidth and simplifying the locking scheme. Additionally, stabilisation of the cavity to the pump frequency enables the 100% duty cycle. These photons are well-suited for storage in quantum memory schemes with sub-natural linewidths, such as gradient echo memories.
Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single photon emitters are also required. However typical solid-state single photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here, we demonstrate bright silicon-vacancy (SiV-) centres in low-strain bulk diamond which intrinsically show spectral overlap of up to 91% and near transform-limited excitation linewidths. Our results have impact upon the application of single photon sources for quantum optics and cryptography, and the production of next generation fluorophores for bio-imaging.
We propose a controllable non-reciprocal transmission model. The model consists of a Mobius ring, which is connected with two one-dimensional semi-infinite chains, and with a two-level atom located inside one of the cavities of the Mobius ring. We use the method of Green function to study the transmittance of a single photon through the model. The results show that the non-reciprocal transmission can be achieved in this model and the two-level atom can behave as a quantum switch for the non-reciprocal transport of the single photon. This controllable non-reciprocal transmission model may inspire new quantum non-reciprocal devices.
In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to ultra-fast spectral diffusion. Continuing the photophysics study on several emitters at room temperature (RT), a maximum average brightness of ~427 kCounts/s is measured. Furthermore, by determining the decay rates of emitters undergoing three-level optical transitions, radiative and non-radiative lifetimes are calculated at RT. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPE in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.
We work out a simple, pulsed pump-probe measurement scheme to measure the homogeneous linewidth of an atomic transition in an inhomogeneously broadened spectral line in a solid state environment. We apply the theory to the I_11/2 -- I_15/2 optical transition of erbium in LiNbO_3:Er^3+ crystal. Beside obtaining the homogeneous linewidth, we have estimated the population relaxation time as well.