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Register a new userPhotophysics of GaN single photon sources in the visible spectral range
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In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to ultra-fast spectral diffusion. Continuing the photophysics study on several emitters at room temperature (RT), a maximum average brightness of ~427 kCounts/s is measured. Furthermore, by determining the decay rates of emitters undergoing three-level optical transitions, radiative and non-radiative lifetimes are calculated at RT. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPE in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.
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Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.
We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452 nm - 2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric down conversion, where one of photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as $4times 10^4$ in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.
Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single photon emitters are also required. However typical solid-state single photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here, we demonstrate bright silicon-vacancy (SiV-) centres in low-strain bulk diamond which intrinsically show spectral overlap of up to 91% and near transform-limited excitation linewidths. Our results have impact upon the application of single photon sources for quantum optics and cryptography, and the production of next generation fluorophores for bio-imaging.
We propose a controllable non-reciprocal transmission model. The model consists of a Mobius ring, which is connected with two one-dimensional semi-infinite chains, and with a two-level atom located inside one of the cavities of the Mobius ring. We use the method of Green function to study the transmittance of a single photon through the model. The results show that the non-reciprocal transmission can be achieved in this model and the two-level atom can behave as a quantum switch for the non-reciprocal transport of the single photon. This controllable non-reciprocal transmission model may inspire new quantum non-reciprocal devices.
Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit non-ideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity, we use synchronized amplitude modulation to temporally filter the emitted light. We observe that the single photon purity, temporal overlap between successive emission events, and indistinguishability can be greatly improved with this technique. As this method can be applied to any triggered single photon source, independent of geometry and after device fabrication, it is a flexible approach to improve the performance of solid-state systems, which often suffer from excess dephasing and multi-photon background emission.
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