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Register a new userRealization of ultrabroadband THz/IR photoresponse in a bias-tunable ratchet photodetector
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High performance Terahertz (THz) photodetector has drawn wide attention and got great improvement due to its significant application in biomedical, astrophysics, nondestructive inspection, 6th generation communication system as well as national security application. Here we demonstrate a novel broadband photon-type THz/infrared (IR) photodetector based on the GaAs/AlxGa1-xAs ratchet structure. This kind of photodetector realizes a THz photon-response based on the electrically pumped hot hole injection and overcomes the internal workfunction related spectral response limit. An ultrabroadband photoresponse from 4 THz to 300 THz and a peak responsivity of 50.3 mA/W are realized at negative bias voltage of -1 V. The photodetector also presents a bias-tunable photon-response characteristic due to the asymmetric structure. The ratchet structure also induces an evident photocurrent even at zero bias voltage, which indicates the detector can be regard as a broadband photovoltaic-like detector. The rectification characteristic and high temperature operation possibility of the photodetector are also discussed. This work not only demonstrates a novel ultrabroadband THz/IR photodetector, but also provides a new method to study the light-responsive ratchet.
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An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photoresponse from terahertz (THz) to near infrared (NIR) region (4-200 THz) was realized that covers a much wider frequency range com-pared with the existing upconversion devices. Broadband IR/THz radiation from 1000 K blackbody is successfully upconverted into NIR photons which can be detected by commercial Si-based device. The normal incidence absorption of the RP simplifies the structure of the RP-LED device and make it more compact compared with the inter-subband transition based upconverters. In addition to the up-conversion function, the proposed upconverter is also tested as photovoltaic detectors in the infrared region (15-200 THz) without an applied bias voltage due to the ratchet effect.
Coupling phase-stable single-cycle terahertz (THz) pulses to scanning tunneling microscope (STM) junctions enables spatio-temporal imaging with femtosecond temporal and r{A}ngstrom spatial resolution. The time resolution achieved in such THz-gated STM is ultimately limited by the sub-cycle temporal variation of the tip-enhanced THz field acting as an ultrafast voltage pulse, and hence by the ability to feed high-frequency, broadband THz pulses into the junction. Here, we report on the coupling of ultrabroadband (1-30 THz) single-cycle THz pulses from a spintronic THz emitter(STE) into a metallic STM junction. We demonstrate broadband phase-resolved detection of the THz voltage transient directly in the STM junction via THz-field-induced modulation of ultrafast photocurrents. Comparison to the unperturbed far-field THz waveform reveals the antenna response of the STM tip. Despite tip-induced low-pass filtering, frequencies up to 15 THz can be detected in the tip-enhanced near-field, resulting in THz transients with a half-cycle period of 115 fs. We further demonstrate simple polarity control of the THz bias via the STE magnetization, and show that up to 2 V THz bias at 1 MHz repetition rate can be achieved in the current setup. Finally, we find a nearly constant THz voltage and waveform over a wide range of tip-sample distances, which by comparison to numerical simulations confirms the quasi-static nature of the THz pulses. Our results demonstrate the suitability of spintronic THz emitters for ultrafast THz-STM with unprecedented bandwidth of the THz bias, and provide insight into the femtosecond response of defined nanoscale junctions.
We present a mid-IR ($lambda approx$ 8.3 $mu$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate. The device is based on a 400 nm-thick GaAs/AlGaAs semiconductor QWIP heterostructure enclosed in a metal-insulator-metal (MIM) cavity and hosted on a mid-IR transparent ZnSe substrate. Metallic stripes are symmetrically patterned by e-beam lithography on both sides of the active region. The detector spectral coverage spans from $lambda approx 7.15$ $mu$m to $lambda approx 8.7$ $mu$m by changing the stripe width L - from L = 1.0 $mu$m to L = 1.3 $mu$m - thus frequency-tuning the optical cavity mode. Both micro-FTIR passive optical characterizations and photocurrent measurements of the two-port system are carried out. They reveal a similar spectral response for the two detector ports, with an experimentally measured T$_{BLIP}$ of $approx$ 200K.
We demonstrate experimentally the operation of a deterministic Josephson ratchet with tunable asymmetry. The ratchet is based on a $varphi$ Josephson junction with a ferromagnetic barrier operating in the underdamped regime. The system is probed also under the action of an additional dc current, which acts as a counter force trying to stop the ratchet. Under these conditions the ratchet works against the counter force, thus producing a non-zero output power. Finally, we estimate the efficiency of the $varphi$ Josephson junction ratchet.
Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type graphene layers. The asymmetry in the graphene contacts creates a large (Ebi ~100 kV cm-1) built-in electric field across the short (l = 15 nm) MoTe2 channel, causing a high and broad (400 to 1400 nm) photoresponse even without any externally applied voltage. Spatially resolved photovoltage maps reveal an enhanced photoresponse and larger built-in electric field in regions of the MoTe2 layer between the two graphene contacts. Furthermore, a fast (~0.01 ms) photoresponse is achieved in both the photovoltaic and photoconductive operation modes of the junction. Our findings could be extended to other 2D materials and offer prospects for the implementation of asymmetric graphene contacts in future low-power optoelectronic applications.
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