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Register a new userEngineering of Atomic-Scale Flexoelectricity at Grain Boundaries
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Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the response of electrical polarization to mechanical strain gradients while not restricted to the symmetry of materials. However, large elastic deformation in most solids is usually difficult to achieve and the strain gradient at minuscule is challenging to control. Here we exploit the exotic structural inhomogeneity of grain boundary to achieve a huge strain gradient (~ 1.2 nm-1) within 3 ~ 4 unit-cells, and thus obtain atomic-scale flexoelectric polarization up to ~ 38 {mu}C/cm2 at a 24 LaAlO3 grain boundary. The nanoscale flexoelectricity also modifies the electrical activity of grain boundaries. Moreover, we prove that it is a general and feasible way to form large strain gradients at atomic scale by altering the misorientation angles of grain boundaries in different dielectric materials. Thus, engineering of grain boundaries provides an effective pathway to achieve tunable flexoelectricity and broadens the electromechanical functionalities of non-piezoelectric materials.
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Pinning-type magnets maintaining high coercivity, i.e. the ability to sustain magnetization, at high temperature are at the core of thriving clean-energy technologies. Among these, Sm2Co17-based magnets are excellent candidates owing to their high-temperature stability. However, despite decades of efforts to optimize the intragranular microstructure, the coercivity currently only reaches 20~30% of the theoretical limits. Here, the roles of the grain-interior nanostructure and the grain boundaries in controlling coercivity are disentangled by an emerging magneto-electric approach. Through hydrogen charging/discharging by applying voltages of only ~ 1 V, the coercivity is reversibly tuned by an unprecedented value of ~ 1.3 T. In situ magneto-structural measurements and atomic-scale tracking of hydrogen atoms reveal that the segregation of hydrogen atoms at the grain boundaries, rather than the change of the crystal structure, dominates the reversible and substantial change of coercivity. Hydrogen lowers the local magnetocrystalline anisotropy and facilitates the magnetization reversal starting from the grain boundaries. Our study reveals the previously neglected critical role of grain boundaries in the conventional magnetisation-switching paradigm, suggesting a critical reconsideration of strategies to overcome the coercivity limits in permanent magnets, via for instance atomic-scale grain boundary engineering.
Synchrotron Laue microdiffraction and Digital Image Correlation measurements were coupled to track the elastic strain field (or stress field) and the total strain field near a general grain boundary in a bent bicrystal. A 316L stainless steel bicrystal was deformed in situ into the elasto-plastic regime with a four-point bending setup. The test was then simulated using finite elements with a crystal plasticity model comprising internal variables (dislocation densities on discrete slip systems). The predictions of the model have been compared with both the total strain field and the elastic strain field obtained experimentally. While activated slip systems and total strains are reasonably well predicted, elastic strains appear overestimated next to the grain boundary. This suggests that conventional crystal plasticity models need improvement to correctly model stresses at grain boundaries.
Interface-dominated materials such as nanocrystalline thin films have emerged as an enthralling class of materials able to engineer functional properties of transition metal oxides widely used in energy and information technologies. In particular, it has been proved that strain-induced defects in grain boundaries of manganites deeply impact their functional properties by boosting their oxygen mass transport while abating their electronic and magnetic order. In this work, the origin of these dramatic changes is correlated for the first time with strong modifications of the anionic and cationic composition in the vicinity of strained grain boundary regions. We are also able to alter the grain boundary composition by tuning the overall cationic content in the films, which represents a new and powerful tool, beyond the classical space charge layer effect, for engineering electronic and mass transport properties of metal oxide thin films useful for a collection of relevant solid state devices.
Precise control and in-depth understanding of the interfaces is crucial for the functionality-oriented material design with desired properties. Herein, via modifying the long-standing bicrystal strategy, we proposed a novel nanowelding approach to build up interfaces between two-dimensional (2D) materials with atomic precision. This method enabled us, for the first time, to experimentally achieve the quasi-full-parameter-space grain boundaries (GBs) in 2D hexagonal boron nitride (h-BN). It further helps us unravel the long-term controversy and confusion on the registry of GBs in h-BN, including i) discriminate the relative contribution of the strain and chemical energy on the registry of GBs; ii) identify a new dislocation core- Frank partial dislocation and four new anti-phase boundaries; and iii) confirm the universal GB faceting. Our work provides a new paradigm to the exploiting of structural-property correlation of interfaces in 2D materials.
Imaging individual vacancies in solids and revealing their interactions with solute atoms remains one of the frontiers in microscopy and microanalysis. Here we study a creep-deformed binary Ni-2 at.% Ta alloy. Atom probe tomography reveals a random distribution of Ta. Field ion microscopy, with contrast interpretation supported by density-functional theory and time-of-flight mass spectrometry, evidences a positive correlation of tantalum with vacancies. Our results support solute-vacancy binding, which explains improvement in creep resistance of Ta-containing Ni-based superalloys and helps guide future material design strategies.
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