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Thermal ripples of graphene are well understood at room temperature, but their quantum counterparts at low temperatures are still in need of a realistic quantitative description. Here we present atomistic path-integral Monte Carlo simulations of freestanding graphene, which show upon cooling a striking classical-quantum evolution of height and angular fluctuations. The crossover takes place at ever-decreasing temperatures for ever-increasing wavelengths so that a completely quantum regime is never attained. Zero-temperature quantum graphene is flatter and smoother than classical at large scales, yet rougher at short scales. The angular fluctuation distribution of the normals can be quantitatively described by coexistence of two Gaussians, one classical strongly T-dependent and one quantum about $2^{circ}$ wide, of zero-point character. The quantum evolution of ripple-induced height and angular spread should be observable in electron diffraction in graphene and other two-dimensional materials like MoS$_2$, bilayer graphene, boron nitride, etc.
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The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 AA which is compatible with experimental findings (50-100 AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.
Intrinsic ripples with various configurations and sizes were reported to affect the physical and chemical properties of 2D materials. By performing molecular dynamics simulations and theoretical analysis, we use two geometric models of the ripple shape to explore numerically the distribution of ripples in graphene membrane. We focus on the ratio of ripple height to its diameter (t/D) which was recently shown to be the most relevant for chemical activity of graphene membranes. Our result demonstrates that the ripple density decreases as the coefficient t/D increases, in a qualitative agreement with the Boltzmann distribution derived analytically from the bending energy of the membrane. Our theoretical study provides also specific quantitative information on the ripple distribution in graphene and gives new insights applicable to other 2D materials.
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {deg}C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.
The Mg-Zn and Al-Zn binary alloys have been investigated theoretically under static isotropic pressure. The stable phases of these binaries on both initially hexagonal-close-packed (HCP) and face-centered-cubic (FCC) lattices have been determined by utilizing an iterative approach that uses a configurational cluster expansion method, Monte Carlo search algorithm, and density functional theory (DFT) calculations. Based on 64-atom models, it is shown that the most stable phases of the Mg-Zn binary alloy under ambient condition are $rm MgZn_3$, $rm Mg_{19}Zn_{45}$, $rm MgZn$, and $rm Mg_{34}Zn_{30}$ for the HCP, and $rm MgZn_3$ and $rm MgZn$ for the FCC lattice, whereas the Al-Zn binary is energetically unfavorable throughout the entire composition range for both the HCP and FCC lattices under all conditions. By applying an isotropic pressure in the HCP lattice, $rm Mg_{19}Zn_{45}$ turns into an unstable phase at P$approx$$10$~GPa, a new stable phase $rm Mg_{3}Zn$ appears at P$gtrsim$$20$~GPa, and $rm Mg_{34}Zn_{30}$ becomes unstable for P$gtrsim$$30$~GPa. For FCC lattice, the $rm Mg_{3}Zn$ phase weakly touches the convex hull at P$gtrsim$$20$~GPa while the other stable phases remain intact up to $approx$$120$~GPa. Furthermore, making use of the obtained DFT results, bulk modulus has been computed for several compositions up to pressure values of the order of $approx$$120$~GPa. The findings suggest that one can switch between $rm Mg$-rich and $rm Zn$-rich early-stage clusters simply by applying external pressure. $rm Zn$-rich alloys and precipitates are more favorable in terms of stiffness and stability against external deformation.
We present a thermodynamic description of crystal plasticity. Our formulation is based on the Langer-Bouchbinder-Lookman thermodynamic dislocation theory (TDT), which asserts the fundamental importance of an effective temperature that describes the state of configurational disorder and therefore the dislocation density of the crystalline material. We extend the TDT description from isotropic plasticity to crystal plasticity with many slip systems. Finite-element simulations show favourable comparison with experiments on polycrystal fcc copper under uniaxial compression, tension, and simple shear. The thermodynamic theory of crystal plasticity thus provides a thermodynamically consistent and physically rigorous description of dislocation motion in crystals. We also discuss new insights about the interaction of dislocations belonging to different slip systems.
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