Do you want to publish a course? Click here

Large-Gap Quantum Anomalous Hall Effect in Monolayer Halide Perovskite

242   0   0.0 ( 0 )
 Added by Zhenhua Qiao
 Publication date 2021
  fields Physics
and research's language is English




Ask ChatGPT about the research

We theoretically propose a family of structurally stable monolayer halide perovskite A$_3$B$_2$C$_9$ (A=Rb, Cs; B=Pd, Pt; C=Cl, Br) with easy magnetization planes. These materials are all half-metals with large spin gaps over 1~eV accompanying with a single spin Dirac point located at K point. When the spin-orbit coupling is switched on, we further show that Rb$_3$Pt$_2$Cl$_9$, Cs$_3$Pd$_2$Cl$_9$, and Cs$_3$Pt$_2$Cl$_9$ monolayers can open up large band gaps from 63 to 103 meV to harbor quantum anomalous Hall effect with Chern numbers of $mathcal{C}=pm1$, whenever the mirror symmetry is broken by the in-plane magnetization. The corresponding Berezinskii-Kosterlitz-Thouless transition temperatures are over 248~K. Our findings provide a potentially realizable platform to explore quantum anomalous Hall effect and spintronics at high temperatures.



rate research

Read More

261 - Xiaosong Wu , Yike Hu , Ming Ruan 2009
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the monolayer C-face sample is 19,000 cm^2/Vs. This is an important step towards the realization of epitaxial graphene based electronics.
Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb)$_2$Te$_3$. We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures.
In the fractional quantum Hall effect regime we measure diagonal ($rho_{xx}$) and Hall ($rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions, together with capacitance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional minima in the thermodynamical density of states have already disappeared manifesting complete suppression of the quasiparticle energy gaps.
345 - Hui Yang , Junjie Zeng , Yulei Han 2020
We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $mathcal{C}=4$ firstly enters a Berry-curvature mediated metallic phase, and then becomes localized to be Anderson insulator along with the increasing of disorder strength. While in magnetic topological insulator thin films, the QAHE with $mathcal{C=N}$ firstly enters a Berry-curvature mediated metallic phase, then transitions to another QAHE with ${mathcal{C}}={mathcal{N}}-1$ along with the increasing of disorder strength, and is finally localized to the Anderson insulator after ${mathcal{N}}-1$ cycling between the QAHE and metallic phases. For the unusual findings in the latter system, by analyzing the Berry curvature evolution, it is known that the phase transitions originate from the exchange of Berry curvature carried by conduction (valence) bands. At the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase transition mechanisms.
Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type conductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends up to at least 10 Tesla. The onset field value remains constant for a unexpectedly wide gate-voltage range. Based on temperature and angle-dependent magnetic field measurements we show that the unusual behavior results from the realization of the quantum anomalous Hall state in these magnetically doped QWs.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا