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In the fractional quantum Hall effect regime we measure diagonal ($rho_{xx}$) and Hall ($rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions, together with capacitance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional minima in the thermodynamical density of states have already disappeared manifesting complete suppression of the quasiparticle energy gaps.
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The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHEs most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a quantitative comparison between the measured energy gaps and the available theoretical calculations that take into account the role of finite layer thickness and Landau level mixing. Our systematic experimental study of the FQHE energy gaps uses very high-quality two-dimensional electron systems confined to GaAs quantum wells with varying well widths. All the measured energy gaps fall bellow the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find the measured energy gaps to be in reasonable quantitative agreement with calculations, although some discrepancies remain.
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. We provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor $ u=n/(2n+1)$ has a striking {it quantitative} correspondence to the localization of a single electron in the $(n+1)$th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation these results can be extended to situations where a finite density of quasiparticles is present.
We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for { u}= 1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at ~20 K at 14 T.
Suppose a classical electron is confined to move in the $xy$ plane under the influence of a constant magnetic field in the positive $z$ direction. It then traverses a circular orbit with a fixed positive angular momentum $L_z$ with respect to the center of its orbit. It is an underappreciated fact that the quantum wave functions of electrons in the ground state (the so-called lowest Landau level) have an azimuthal dependence $propto exp(-imphi) $ with $mgeq 0$, seemingly in contradiction with the classical electron having positive angular momentum. We show here that the gauge-independent meaning of that quantum number $m$ is not angular momentum, but that it quantizes the distance of the center of the electrons orbit from the origin, and that the physical angular momentum of the electron is positive and independent of $m$ in the lowest Landau levels. We note that some textbooks and some of the original literature on the fractional quantum Hall effect do find wave functions that have the seemingly correct azimuthal form $proptoexp(+imphi)$ but only on account of changing a sign (e.g., by confusing different conventions) somewhere on the way to that result.
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