No Arabic abstract
We collect values of selected performance characteristics of semiconductor spin qubits defined in electrically controlled nanostructures. The characteristics are envisioned to serve as a community source for the values of figures of merit with agreed-on definitions allowing comparison of different qubit platforms. We include characteristics on the qubit coherence, speed, fidelity, and the qubit-size of multi-qubit devices. The review focuses on collecting the values of these characteristics as reported in the literature, rather than on the details of their definitions or significance. The core of the review are thus tables and figures.
We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically distributed impurities in the channel, which leads to the observed current.
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the $+K$ valley of the Brillouin zone, and the other state located at the $-K$ valley with spin up. We describe the qubit operations necessary to rotate the spin-valley qubit as a combination of the applied vertical electric field, enabling spin-orbit coupling in a single valley, with a lateral strongly localized valley-mixing gate.
Two basic physical models, a two-level system and a harmonic oscillator, are realized on the mesoscopic scale as coupled qubit and resonator. The realistic system includes moreover the electronics for controlling the distance between the qubit energy levels and their populations and to read out the resonators state, as well as the unavoidable dissipative environment. Such rich system is interesting both for the study of fundamental quantum phenomena on the mesoscopic scale and as a promising system for future electronic devices. We present recent results for the driven superconducting qubit-resonator system, where the resonator can be realized as an LC circuit or a nanomechanical resonator. Most of the results can be described by the semiclassical theory, where a qubit is treated as a quantum two-level system coupled to the classical driving field and the classical resonator. Application of this theory allows to describe many phenomena for the single and two coupled superconducting qubits, among which are the following: the equilibrium-state and weak-driving spectroscopy, Sisyphus damping and amplification, Landau-Zener-Stuckelberg interferometry, the multiphoton transitions of both direct and ladder- type character, and creation of the inverse population for lasing.
The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes.
Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical properties - such as the carrier mobility and the superconducting transition temperature - undergo upon the introduction of disorder. This makes the two-dimensional hole gas induced at its surface by electric field-effect doping particularly interesting from both a fundamental and an applied perspective, since it strongly reduces the amount of extrinsic disorder with respect to the standard boron substitution. In this short review, we summarize the main results achieved so far in controlling the electric transport properties of different field-effect doped diamond surfaces via the ionic gating technique. We analyze how ionic gating can tune their conductivity, carrier density and mobility, and drive the different surfaces across the insulator-to-metal transition. We review their strongly orientation-dependent magnetotransport properties, with a particular focus on the gate-tunable spin-orbit coupling shown by the (100) surface. Finally, we discuss the possibility of field-induced superconductivity in the (110) and (111) surfaces as predicted by density functional theory calculations.