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Register a new userHysteretic effects and magnetotransport of electrically switched CuMnAs
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Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs.
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Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the Neel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing ionic liquid as a gate insulator. The data allow to determine the carrier type, concentration, and mobility independently of the Hall effect that may be affected by an anomalous component.
We present a new class of artificial materials which exhibit a tailored response to the electrical component of electromagnetic radiation. These electric metamaterials (EM-MMs) are investigated theoretically, computationally, and experimentally using terahertz time-domain spectroscopy. These structures display a resonant response including regions of negative permittivity (epsilon < 0) ranging from ~500 GHz to 1 THz. Conventional electric media such as distributed wires are difficult to incorporate into metamaterials. In contrast, these new localized structures will simplify the construction of future metamaterials - including those with negative index of refraction - and will enhance the design and fabrication of functional THz devices.
We report the hysteresis of optically-pumped nuclear spin polarization and the degree of circular polarization of photoluminescence on the excitation power and electron spin polarization in single InAlAs quantum dots. By increasing (or decreasing) the excitation power at a particular excitation polarization, an abrupt rise (or drop) and a clear hysteretic behavior were observed in the Overhauser shift of the photoluminescence of the exciton and exciton complexes from the same single quantum dot under an external magnetic field of 5 T. However, the degree of circular polarization shows different behaviors between a positively charged exciton and a neutral exciton or biexciton; further, only positively charged exciton exhibits the precisely synchronized change and hysteretic behavior. It is suggested that the electron spin distribution is affected by the flip-flop of electron-nuclear spins. Further, the hysteresis is observed as a function of the degree of circular polarization of the excitation light and its dependence on the excitation power is studied. The saturation of the Overhauser shift after the abrupt rise indicates the almost complete cancellation of the external magnetic field by the nuclear field created within the width that is decided by the correlation time between the electron and the nuclei spin system.
Utilizing Corbino disc structures, we have examined the magnetic field response of resistivity for the surface states of SmB6 on different crystalline surfaces at low temperatures. Our results reveal a hysteretic behavior whose magnitude depends on the magnetic field sweep rate and temperature. Although this feature becomes smaller when the field sweep is slower, a complete elimination or saturation is not observed in our slowest sweep-rate measurements, which is much slower than a typical magnetotransport trace. These observations cannot be explained by quantum interference corrections such as weak anti-localization. Instead, they are consistent with behaviors of glassy surface magnetic ordering, whose magnetic origin is most likely from samarium oxide (Sm2O3) forming on the surface during exposure to ambient conditions.
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.
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