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Register a new userHysteretic response of electron-nuclear spin system in single InAlAs quantum dots:Excitation power and polarization dependences
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We report the hysteresis of optically-pumped nuclear spin polarization and the degree of circular polarization of photoluminescence on the excitation power and electron spin polarization in single InAlAs quantum dots. By increasing (or decreasing) the excitation power at a particular excitation polarization, an abrupt rise (or drop) and a clear hysteretic behavior were observed in the Overhauser shift of the photoluminescence of the exciton and exciton complexes from the same single quantum dot under an external magnetic field of 5 T. However, the degree of circular polarization shows different behaviors between a positively charged exciton and a neutral exciton or biexciton; further, only positively charged exciton exhibits the precisely synchronized change and hysteretic behavior. It is suggested that the electron spin distribution is affected by the flip-flop of electron-nuclear spins. Further, the hysteresis is observed as a function of the degree of circular polarization of the excitation light and its dependence on the excitation power is studied. The saturation of the Overhauser shift after the abrupt rise indicates the almost complete cancellation of the external magnetic field by the nuclear field created within the width that is decided by the correlation time between the electron and the nuclei spin system.
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We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, $T_2^ast$, increases from about 20 ps to 200 ps; Moreover, $T_2^ast$ increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the Dyakonov-Perel and the Bir-Aronov-Pikus mechanisms, with {em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing $P$ and the temperature dependences at different spin polarizations.
We demonstrated the cancellation of the external magnetic field by the nuclear field at one edge of the nuclear polarization bistability in single InAlAs quantum dots. The cancellation for the electron Zeeman splitting gives the precise value of the hole g-factor. By combining with the exciton g-factor that is obtained from the Zeeman splitting for linearly polarized excitation, the magnitude and sign of the electron and hole g-factors in the growth direction are evaluated.
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs.
The nature of the nano-scale environment presents a major challenge for solid-state implementation of spin-based qubits. In this work, a single electron spin in an optically pumped nanometer-sized III-V semiconductor quantum dot is used to control a macroscopic nuclear spin of several thousand nuclei, freezing its decay and leading to spin life-times exceeding 100 seconds at low temperatures. Few-millisecond-fast optical initialization of the nuclear spin is followed by a slow decay exhibiting random telegraph signals at long delay times, arising from low probability electron jumps out of the dot. The remarkably long spin life-time in a dot surrounded by a densely-packed nuclear spin environment arises from the Knight field created by the resident electron, which leads to suppression of nuclear spin depolarization.
A precessing spin observed in a rotating frame of reference appears frequency-shifted, an effect analogous to the precession of a Foucault pendulum observed on the rotating Earth. This frequency shift can be understood as arising from a magnetic pseudo-field in the rotating frame that nevertheless has physically significant consequences, such as the Barnett effect. Detecting these pseudo-fields is experimentally challenging, as a rotating-frame sensor is required. Previous work has realised classical rotating-frame detectors. Here we use quantum sensors, nitrogen-vacancy (NV) centres, in a rapidly rotating diamond to detect pseudo-fields in the rotating frame. While conventional magnetic fields induce precession at a rate proportional to the gyromagnetic ratio, rotation shifts the precession of all spins equally, and thus primarily affect nearby $^{13}$C nuclear spins. We are thus able to explore these effects via quantum sensing in a rapidly rotating frame, and define a new approach to quantum control using rotationally-induced nuclear spin-selective magnetic fields. This work provides an integral step towards realising precision rotation sensing and quantum spin gyroscopes.
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