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Register a new userLithium niobate microring with ultra-high Q factor above 10^8
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We demonstrate ultra-high Q factor microring resonators close to the intrinsic material absorption limit on lithium niobate on insulator. The microrings are fabricated on pristine lithium niobate (LN) thin film wafer thinned from LN bulk via chemo-mechanical etching without ion slicing and ion etching. A record-high Q factor up to times ten to the power of 8th at the wavelength of 1550 nm is achieved because of the ultra-smooth interface of the microrings and the absence of ion induced lattice damage, indicating an ultra-low waveguide propagation loss of about 0.28 dB per meter. The ultra-high Q microrings will pave the way for integrated quantum light source, frequency comb generation, and nonlinear optical processes.
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We demonstrate an ultralow loss monolithic integrated lithium niobate photonic platform consisting of dry-etched subwavelength waveguides. We show microring resonators with a quality factor of 10$^7$ and waveguides with propagation loss as low as 2.7 dB/m.
We demonstrated broadband highly efficient optical nonlinear processes in on-chip integrated lithium niobate (LN) microdisk resonators. The Q factors of the micro-resonators fabricated by femtosecond laser writing and chemo-mechanical polishing are reliably above 10^8, approaching the intrinsic material absorption limit of LN. Broadband nonlinear processes, including optical parametric oscillation (OPO), second harmonic generation (SHG), third harmonic generation, and fourth harmonic generation, were observed with ultrahigh efficiencies in the same LN microdisk without introducing domain inversion, thanks to the natural quasi phase-matching and the dense spectral modes of the X-cut LN microdisk with millimeter diameter. The threshold of OPO and the absolute conversion efficiency of SHG are 19.6 microwatt and 66%, both surpass the state-of-the-art values among on-chip LN micro-resonators demonstrated so far. The broadband and highly efficient nonlinear frequency
Lithium niobate on insulator (LNOI), regarded as an important candidate platform for optical integration due to its excellent nonlinear, electro-optic and other physical properties, has become a research hotspot. Light source, as an essential component for integrated optical system, is urgently needed. In this paper, we reported the realization of 1550-nm band on-chip LNOI microlasers based on erbium-doped LNOI ring cavities with loaded quality factors higher than one million, which were fabricated by using electron beam lithography and inductively coupled plasma reactive ion etching processes. These microlasers demonstrated a low pump threshold of ~20 {mu}W and stable performance under the pump of a 980-nm band continuous laser. Comb-like laser spectra spanning from 1510 nm to 1580 nm were observed in high pump power regime, which lays the foundation of the realization of pulsed laser and frequency combs on rare-earth ion doped LNOI platform. This work has effectively promoted the development of on-chip integrated active LNOI devices.
The absence of the single-photon nonlinearity has been a major roadblock in developing quantum photonic circuits at optical frequencies. In this paper, we demonstrate a periodically-poled thin film lithium niobate microring resonator (PPLNMR) that reaches 5,000,000%/W second harmonic conversion efficiency---almost 20-fold enhancement over the state-of-the-art---by accessing its largest $chi^{(2)}$ tensor component $d_{33}$ via quasi-phase matching. The corresponding single photon coupling rate $g/2pi$ is estimated to be 1.2 MHz, which is an important milestone as it approaches the dissipation rate $kappa/2pi$ of best available lithium niobate microresonators developed in the community. Using a figure of merit defined as $g/kappa$, our devices reach a single photon nonlinearity approaching 1%. We show that, by further scaling of the device, it is possible to improve the single photon nonlinearity to a regime where photon-blockade effect can be manifested.
Future quantum networks in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical quality factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.
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