No Arabic abstract
We present time-resolved high energy x-ray diffraction (tr-HEXRD), time-resolved hard x-ray photoelectron spectroscopy (tr-HAXPES) and time-resolved grazing incidence small angle x-ray scattering (tr-GISAXS) data of the reactive molecular beam epitaxy (RMBE) of $mathrm{Fe_3O_4}$ ultrathin films on various substrates. Reciprocal space maps are recorded during the deposition of $mathrm{Fe_3O_4}$ on $mathrm{SrTiO_3(001)}$, MgO(001) and NiO/MgO(001) in order to observe the temporal evolution of Bragg reflections sensitive to the octahedral and tetrahedral sublattices of the inverse spinel structure of $mathrm{Fe_3O_4}$. A time delay between the appearance of rock salt and spinel-exclusive reflections reveals that first, the iron oxide film grows with $mathrm{Fe_{1-delta}O}$ rock salt structure with exclusive occupation of octahedral lattice sites. When this film is 1.1$,$nm thick, the further growth of the iron oxide film proceeds in the inverse spinel structure, with both octahedral and tetrahedral lattice sites being occupied. In addition, iron oxide on $mathrm{SrTiO_3(001)}$ initially grows with none of these structures. Here, the formation of the rock salt structure starts when the film is 1.5$,$nm thick. This is confirmed by tr-HAXPES data obtained during growth of iron oxide on $mathrm{SrTiO_3(001)}$, which demonstrate an excess of $mathrm{Fe^{2+}}$ cations in growing films thinner than 3.2$,$nm. This rock salt phase only appears during growth and vanishes after the supply of the Fe molecular beam is stopped. Thus, it can be concluded the rock salt structure of the interlayer is a property of the dynamic growth process. The tr-GISAXS data link these structural results to an island growth mode of the first 2-3$,$nm on both MgO(001) and $mathrm{SrTiO_3(001)}$ substrates.
A detailed understanding of ultrathin film surface properties is crucial for the proper interpretation of spectroscopic, catalytic and spin-transport data. We present x-ray magnetic circular dichroism (XMCD) and x-ray resonant magnetic reflectivity (XRMR) measurements on ultrathin $mathrm{Fe_3O_4}$ films to obtain magnetic depth profiles for the three resonant energies corresponding to the different cation species $mathrm{Fe^{2+}_{oct}}$, $mathrm{Fe^{3+}_{tet}}$ and $mathrm{Fe^{3+}_{oct}}$ located on octahedral and tetrahedral sites of the inverse spinel structure of $mathrm{Fe_3O_4}$. By analyzing the XMCD spectrum of $mathrm{Fe_3O_4}$ using multiplet calculations, the resonance energy of each cation species can be isolated. Performing XRMR on these three resonant energies yields magnetic depth profiles that correspond each to one specific cation species. The depth profiles of both kinds of $mathrm{Fe^{3+}}$ cations reveal a $mathrm{3.9 pm 1~r{A}}$-thick surface layer of enhanced magnetization, which is likely due to an excess of these ions at the expense of the $mathrm{Fe^{2+}_{oct}}$ species in the surface region. The magnetically enhanced $mathrm{Fe^{3+}_{tet}}$ layer is additionally shifted about $mathrm{3pm 1.5~r{A}}$ farther from the surface than the $mathrm{Fe^{3+}_{oct}}$ layer.
We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate stoichiometry effects on the structural and transport properties. The highest onset transition temperature of about 1.1 K is observed for films grown in a slightly Ru-rich flux condition in order to suppress Ru deficiency. The realization of superconducting Sr2RuO4 films via oxide MBE opens up a new route to study the unconventional superconductivity of this material.
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy (MBE) to achieve uniform and continuous single crystal films of Na3Bi(0001) on insulating Al2O3(0001) substrates and demonstrate electrical transport on films with 3.8 nm thickness (4 unit cells). The high material quality is confirmed through in situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). In addition, these films are employed as seed layers for subsequent growth by codeposition, leading to atomic layer-by-layer growth as indicated by RHEED intensity oscillations. These material advances facilitate the pursuit of quantum phenomena in thin films of Dirac semimetals.
We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0001)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations.
The electronic structures of the ferromagnetic superconductors $mathrm{UGe}_2$ and $mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($h u =400-500$). The quasi-particle bands with large contributions from $mathrm{U}~5f$ states were observed in the vicinity of $E_mathrm{F}$, suggesting that the $mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $mathrm{U}~5f$ and $mathrm{Co}~3d$ states in $mathrm{UCoGe}$ were found by the $mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties.