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Register a new userFirst experimental demonstration of a scalable linear majority gate based on spin waves
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We report on the first experimental demonstration of majority logic operation using spin waves in a scaled device with an in-line input and output layout. The device operation is based on the interference of spin waves generated and detected by inductive antennas in an all-electrical microwave circuit. We demonstrate the full truth table of a majority logic function with the ability to distinguish between strong and weak majority, as well as an inverted majority function by adjusting the operation frequency. Circuit performance projections predict low energy consumption of spin wave based compared to CMOS for large arithmetic circuits.
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Featuring low heat dissipation, devices based on spin-wave logic gates promise to comply with increasing future requirements in information processing. In this work, we present the experimental realization of a majority gate based on the interference of spin waves in an Yttrium-Iron-Garnet-based waveguiding structure. This logic device features a three-input combiner with the logic information encoded in the phase of the spin waves. We show that the phase of the output signal represents the majority of the phase of the input signals. A switching time of about 10 ns in the prototype device provides evidence for the ability of sub-nanosecond data processing in future down-scaled devices.
Progress in spintronics has been aided by characterization tools tailored to certain archetypical materials. New device structures and materials will require characterization tools that are material independent, provide sufficient resolution to image locally-varying spin properties and enable subsurface imaging. Here we report the demonstration of a novel spin-microscopy tool based on the variation of a global spin-precession signal in response to the localized magnetic field of a scanned probe. We map the local spin density in optically pumped GaAs from this spatially-averaged signal with a resolution of 5.5 microns. This methodology is also applicable to other spin properties and its resolution can be improved. It can extend spin microscopy to device structures not accessible by other techniques, such as buried interfaces and non-optically active materials, due to the universal nature of magnetic interactions between the spins and the probe.
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure a spin relaxation time T1 = 170 ms at a magnetic field B = 1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 microeV, which indicates that 50 GHz two-qubit gate operation speeds are feasible.
The manipulation of topologically protected field configurations, already predicted and experimentally observed in non-centrosymmetric magnets, as skyrmions, merons and antimerons could definitely have potential applications in logic gate operations as carriers of information. Here, we present and elaborate a proof of concept on how to construct a three-input non-canonical majority gate on a kagome ferromagnet lacking inversion symmetry. By taking advantage of the existence of edge modes in a Kagome magnet, it is possible to create topological excitations as merons and antimerons at the edge of the material. Using atomistic spin dynamics simulations, we determine the precise physical conditions for the creation and annihilation of merons and antimerons and, in a second stage, we describe the majority gate functionality.
A novel rf-SQUID flux qubit that is robust against fabrication variations in Josephson junction critical currents and device inductance has been implemented. Measurements of the persistent current and of the tunneling energy between the two lowest lying states, both in the coherent and incoherent regime, are presented. These experimental results are shown to be in agreement with predictions of a quantum mechanical Hamiltonian whose parameters were independently calibrated, thus justifying the identification of this device as a flux qubit. In addition, measurements of the flux and critical current noise spectral densities are presented that indicate that these devices with Nb wiring are comparable to the best Al wiring rf-SQUIDs reported in the literature thusfar, with a $1/f$ flux noise spectral density at $1 $Hz of $1.3^{+0.7}_{-0.5} muPhi_0/sqrt{text{Hz}}$. An explicit formula for converting the observed flux noise spectral density into a free induction decay time for a flux qubit biased to its optimal point and operated in the energy eigenbasis is presented.
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