No Arabic abstract
Progress in spintronics has been aided by characterization tools tailored to certain archetypical materials. New device structures and materials will require characterization tools that are material independent, provide sufficient resolution to image locally-varying spin properties and enable subsurface imaging. Here we report the demonstration of a novel spin-microscopy tool based on the variation of a global spin-precession signal in response to the localized magnetic field of a scanned probe. We map the local spin density in optically pumped GaAs from this spatially-averaged signal with a resolution of 5.5 microns. This methodology is also applicable to other spin properties and its resolution can be improved. It can extend spin microscopy to device structures not accessible by other techniques, such as buried interfaces and non-optically active materials, due to the universal nature of magnetic interactions between the spins and the probe.
We report on the first experimental demonstration of majority logic operation using spin waves in a scaled device with an in-line input and output layout. The device operation is based on the interference of spin waves generated and detected by inductive antennas in an all-electrical microwave circuit. We demonstrate the full truth table of a majority logic function with the ability to distinguish between strong and weak majority, as well as an inverted majority function by adjusting the operation frequency. Circuit performance projections predict low energy consumption of spin wave based compared to CMOS for large arithmetic circuits.
A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (in the ideal sense), it has yet to be applied widely to actual physical devices. In this paper, we experimentally apply it to a current-carrying wire interacting with a magnetic core, which was recently claimed to be a memristor (so-called `$Phi$ memristor) [J. Appl. Phys. 125, 054504 (2019)]. The results of our experiment demonstrate unambiguously that this `$Phi$ memristor is not a memristor: it is simply an inductor with memory. This demonstration casts further doubts that ideal memristors do actually exist in nature or may be easily created in the lab.
We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on the spin orientation.We demonstrate that the spin precession (Hanle) line shape is strongly dependent on the degree of anisotropy and on the orientation of the magnetic field. In particular, we show that the anisotropy of the spin lifetime can be extracted from the measured spin signal, after dephasing in an oblique magnetic field, by using an analytical formula with a single fitting parameter. Alternatively, after identifying the fingerprints associated with the anisotropy, we propose a simple scaling of the Hanle line shapes at specific magnetic field orientations that results in a universal curve only in the isotropic case. The deviation from the universal curve can be used as a complementary means of quantifying the anisotropy by direct comparison with the solution of our generalized model. Finally, we applied our model to graphene devices and find that the spin relaxation for graphene on silicon oxide is isotropic within our experimental resolution.
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in critical charge current for spin torque driven magnetization reversal via using spin-orbit mediated spin current generation. We scaled the dimensions of the spin-orbit electrode to 400 nm and the nanomagnet to 270 nm x 68 nm in a three terminal spin-orbit torque, magnetic tunnel junction (SOT-MTJ) geometry. Our estimated effective spin Hall angle is 0.15-0.20 using the ratio of zero temperature critical current from spin Hall switching and estimated spin current density for switching the magnet. We show bidirectional transient switching using spin-orbit generated spin torque at 100 ns switching pulses reliably followed by transient read operations. We finally compare the static and dynamic response of the SOT-MTJ with transient spin circuit modeling showing the performance of scaled SOT-MTJs to enable nanosecond class non-volatile MTJs.
Precession and relaxation predominantly characterize the real-time dynamics of a spin driven by a magnetic field and coupled to a large Fermi sea of conduction electrons. We demonstrate an anomalous precession with frequency higher than the Larmor frequency or with inverted orientation in the limit where the electronic motion adiabatically follows the spin dynamics. For a classical spin, the effect is traced back to a geometrical torque resulting from a finite spin Berry curvature.