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Register a new userResonant Nonlinear Hall Effect in Two-Dimensional Electron Systems
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We study the Hall conductivity of a two-dimensional electron gas under an inhomogeneous magnetic field $B(x)$. First, we prove using the quantum kinetic theory that an odd magnetic field can lead to a purely nonlinear Hall response. Second, considering a real-space magnetic dipole consisting of a sign-changing magnetic field and based on numerical semiclassical dynamics, we unveil a parametric resonance involving the cyclotron ratio and a characteristic width of $B(x)$, which can greatly enhance the Hall response. Different from previous mechanisms that rely on the bulk Berry curvature dipole, here, the effect largely stems from boundary states associated with the real-space magnetic dipole. Our findings pave a new way to engineer current rectification and higher harmonic generation in two-dimensional materials having or not crystal inversion symmetry.
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An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a {pi}/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of {pi}/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.
A circularly polarized a.c. pump field illuminated near resonance on two-dimensional transition metal dichalcogenides (TMDs) produces an anomalous Hall effect in response to a d.c. bias field. In this work, we develop a theory for this photo-induced anomalous Hall effect in undoped TMDs irradiated by a strong coherent laser field. The strong field renormalizes the equilibrium bands and opens up a dynamical energy gap where single-photon resonance occurs. The resulting photon dressed states, or Floquet states, are treated within the rotating wave approximation. A quantum kinetic equation approach is developed to study the non-equilibrium density matrix and time-averaged transport currents under the simultaneous influence of the strong a.c. pump field and the weak d.c. probe field. Dissipative effects are taken into account in the kinetic equation that captures relaxation and dephasing. The photo-induced longitudinal and Hall conductivities display notable resonant signatures when the pump field frequency reaches the spin-split interband transition energies. Rather than valley polarization, we find that the anomalous Hall current is mainly driven by the intraband response of photon-dressed electron populations near the dynamical gap at both valleys, accompanied by a smaller contribution due to interband coherences. These findings highlight the importance of photon-dressed bands and non-equilibrium distribution functions in achieving a proper understanding of photo-induced anomalous Hall effect in a strong pump field.
We study the coupled dynamics of spin and charge currents in a two-dimensional electron gas in the transport diffusive regime. For systems with inversion symmetry there are established relations between the spin Hall effect, the anomalous Hall effect and the inverse spin Hall effect. However, in two-dimensional electron gases of semiconductors like GaAs, inversion symmetry is broken so that the standard arguments do not apply. We demonstrate that in the presence of a Rashba type of spin-orbit coupling (broken structural inversion symmetry) the anomalous Hall effect, the spin Hall and inverse spin Hall effect are substantially different effects. Furthermore we discuss the inverse spin Hall effect for a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit coupling; our results agree with a recent experiment.
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit interaction in a two-dimensional electron gas are present simultaneously. Surprisingly, even when the extrinsic mechanism is the dominant driving force for spin Hall currents, the amplitude of the spin Hall conductivity may be considerably tuned by varying the intrinsic spin-orbit coupling via a gate voltage. Furthermore we provide an explanation of the experimentally observed out-of-plane spin polarization in a (110) GaAs quantum well.
We propose to engineer time-reversal-invariant topological insulators in two-dimensional (2D) crystals of transition metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop spin-polarized Landau levels residing in different valleys. We argue that gaps between Landau levels in the range of $10-100$ Kelvin are within experimental reach. In addition, we point out that a superlattice arising from a Moire pattern can lead to topologically non-trivial subbands. As a result, the edge transport becomes quantized, which can be probed in multi-terminal devices made using strained 2D crystals and/or heterostructures. The strong $d$ character of valence and conduction bands may also allow for the investigation of the effects of electron correlations on the topological phases.
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