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An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a {pi}/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of {pi}/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.
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The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.
The nonlinear Hall effect is mostly studied as a Berry curvature dipole effect in nonmagnetic materials, which depends linearly on the relaxation time. On the other hand, in magnetic materials, an intrinsic nonlinear Hall effect can exist, which does not depend on the relaxation time. Here we show that the intrinsic nonlinear Hall effect can be observed in an antiferromagnetic metal: tetragonal CuMnAs, and the corresponding conductivity can reach the order of mA/V$^2$ based on density functional theory calculations. The dependence on the chemical potential of such nonlinear Hall conductivity can be qualitatively explained by a tilted massive Dirac model. Moreover, we demonstrate its strong temperature-dependence and briefly discuss its competition with the second order Drude conductivity. Finally, a complete survey of magnetic point groups are presented, providing guidelines for finding candidate materials with the intrinsic nonlinear Hall effect.
We study the Hall conductivity of a two-dimensional electron gas under an inhomogeneous magnetic field $B(x)$. First, we prove using the quantum kinetic theory that an odd magnetic field can lead to a purely nonlinear Hall response. Second, considering a real-space magnetic dipole consisting of a sign-changing magnetic field and based on numerical semiclassical dynamics, we unveil a parametric resonance involving the cyclotron ratio and a characteristic width of $B(x)$, which can greatly enhance the Hall response. Different from previous mechanisms that rely on the bulk Berry curvature dipole, here, the effect largely stems from boundary states associated with the real-space magnetic dipole. Our findings pave a new way to engineer current rectification and higher harmonic generation in two-dimensional materials having or not crystal inversion symmetry.
Recent studies have shown that moir{e} flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the 3/4 filling [3, 4]. In this work, we show that the large Berry curvatures in the moir{e} bands lead to strong nonlinear Hall(NLH) effect in a strained TBG with general filling factors. Under a weak uniaxial strain $sim 0.1%$, the Berry curvature dipole which characterizes the nonlinear Hall response can be as large as $sim$ 200{AA}, exceeding the values of all previously known nonlinear Hall materials [5-14] by two orders of magnitude. The dependence of the giant NLH effect as a function of electric gating, strain and twist angle is further investigated systematically. Importantly, we point out that the giant NLH effect appears generically for twist angle near the magic angle due to the strong susceptibility of nearly flat moir{e} bands to symmetry breaking induced by strains. Our results establish TBG as a practical platform for tunable NLH effect and novel transport phenomena driven by nontrivial Berry phases.
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