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Time resolution of 4H-SiC PIN detector

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 Added by Xin Shi
 Publication date 2021
  fields Physics
and research's language is English




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We report the time resolution of 100 $rm mu m$ 4H-SiC PIN detectors which are fabricated by Nanjing University (NJU). The time responses for $rm beta$ particle from $rm ^{90}$Sr source are investigated for the detection of the minimum ionizing particles (MIPs). The influences of different reverse voltages which correspond to carrier velocity and device sizes which correlate with capacitance for time resolution are studied. We acquired a time resolution (94$pm$1) ps for 100 $rm mu m$ 4H-SiC PIN detector. A fast simulation software - RASER (RAdiation SEmiconductoR) has been developed to simulate the time resolution of 4H-SiC detector, and the simulation has been validated by the waveform comparison of RASER simulation and measured data. The simulated time resolution is (53 $pm$ 1) ps after consider the intrinsic leading contributions of detector in time resolution.



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A new timing detector measuring ~50 MeV/c positrons is under development for the MEG II experiment, aiming at a time resolution $sigma_t sim 30~mathrm{ps}$. The resolution is expected to be achieved by measuring each positron time with multiple counters made of plastic scintillator readout by silicon photomultipliers (SiPMs). The purpose of this work is to demonstrate the time resolution for ~50 MeV/c positrons using prototype counters. Counters with dimensions of $90times 40times 5~mathrm{mm}^3$ readout by six SiPMs (three on each $40times 5~mathrm{mm}^2$ plane) were built with SiPMs from Hamamatsu Photonics and AdvanSiD and tested in a positron beam at the DA$Phi$NE Beam Test Facility. The time resolution was found to improve nearly as the square root of the number of counter hits. A time resolution $sigma_t=26.2pm1.3~mathrm{ps}$ was obtained with eight counters with Hamamatsu SiPMs. These results suggest that the design resolution is achievable in the MEG II experiment.
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.
In a neutrinoless double-beta decay ($0 ubetabeta$) experiment, energy resolution is important to distinguish between $0 ubetabeta$ and background events. CAlcium fluoride for studies of Neutrino and Dark matters by Low Energy Spectrometer (CANDLES) discerns the $0 ubetabeta$ of $^{48}$Ca using a CaF$_2$ scintillator as the detector and source. Photomultiplier tubes (PMTs) collect scintillation photons. At the Q-value of $^{48}$Ca, the current energy resolution (2.6%) exceeds the ideal statistical fluctuation of the number of photoelectrons (1.6%). Because of CaF$_2$s long decay constant of 1000 ns, a signal integration within 4000 ns is used to calculate the energy. The baseline fluctuation ($sigma_{baseline}$) is accumulated in the signal integration, thus degrading the energy resolution. This paper studies $sigma_{baseline}$ in the CANDLES detector, which severely degrades the resolution by 1% at the Q-value of $^{48}$Ca. To avoid $sigma_{rm baseline}$, photon counting can be used to obtain the number of photoelectrons in each PMT; however, a significant photoelectron signal overlapping probability in each PMT causes missing photoelectrons in counting and reduces the energy resolution. Partial photon counting reduces $sigma_{baseline}$ and minimizes photoelectron loss. We obtain improved energy resolutions of 4.5-4.0% at 1460.8 keV ($gamma$-ray of $^{40}$K), and 3.3-2.9% at 2614.5 keV ($gamma$-ray of $^{208}$Tl). The energy resolution at the Q-value is estimated to be improved from 2.6% to 2.2%, and the detector sensitivity for the $0 ubetabeta$ half-life of $^{48}$Ca can be improved by 1.09 times.
Timing-pick up detectors with excellent timing resolutions are essential in many modern nuclear physics experiments. Aiming to develop a Time-Of-Flight system with precision down to about 10 ps, we have made a systematic study of the timing characteristic of TOF detectors, which consist of several combinations of plastic scintillators and photomultiplier tubes. With the conventional electronics, the best timing resolution of about 5.1 ps ({sigma}) has been achieved for detectors with an area size of 3x1 cm2. It is found that for data digitalization a combination of TAC and ADC can achieve a better time resolution than currently available TDC. Simultaneously measurements of both time and pulse height are very valuable for correction of time-walk effect.
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been recorded as function of incident proton position with a spatial resolution of 2 um. The CCE profile shows a broad plateau with CCE values close to 100% occurring at the depletion layer, whereas in the neutral region, the exponentially decreasing profile indicates the dominant role played by the diffusion transport mechanism. Mapping of charge pulses was accomplished by a novel computational approach, which consists in mapping the Gunns weighting potential by solving the electrostatic problem by finite element method and hence evaluating the induced charge at the sensing electrode by a Monte Carlo method. The combination of these two computational methods enabled an exhaustive interpretation of the experimental profiles and allowed an accurate evaluation both of the electrical characteristics of the active region (e.g. electric field profiles) and of basic transport parameters (i. e. diffusion length and minority carrier lifetime).
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