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Register a new userShaping the modal confinement in silicon nanophotonic waveguides through dual-metamaterial engineering
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Added by
Carlos Alonso-Ramos
Publication date
2021
fields
Physics
and research's language is
English
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Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness, resulting in limited flexibility in evanescent field control. Here, we propose and demonstrate a new strategy that exploits metamaterial engineering of the waveguide core and cladding to control the index contrast in the vertical and horizontal directions, independently. The proposed dual-material geometry yields a substantially increased calculated overlap with the air (0.35) compared to the best-case scenario for a strip waveguide (0.3). To experimentally demonstrate the potential of this approach, we have implemented dual-metamaterial ring resonators, operating with the transverse-magnetic polarized mode in 220-nm-thick waveguides with air as upper-cladding. Micro-ring resonators implemented with strip and dual-metamaterial waveguides exhibit the same measured quality factors, near 30,000. Having similar measured quality factors and better calculated external confinement factors than strip waveguides, the proposed dual-metamaterial geometry stands as a promising approach to control modal confinement in silicon waveguides.
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We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200 meV below the GaAs bandgap, i.e. in the 910--970 nm wavelength range. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20 dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots, towards the realization of scalable quantum photonic integrated circuits.
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Tapered and dispersion managed (DM) silicon nanophotonic waveguides are investigated for the generation of optimal ultra broadband supercontinuum (SC). DM waveguides are structures showing a longitudinally dependent group velocity dispersion that results from the variation of the waveguide width with the propagation distance. For the generation of optimal SC, a genetic algorithm has been used to find the best dispersion map. This allows for the generation of highly coherent supercontinuums that span over 1.14 octaves from 1300 nm to 2860 nm and 1.25 octaves from 1200 nm to 2870 nm at -20 dB level for the tapered and DM waveguides respectively, for a 2 $mu$m, 200 fs and 6.4 pJ input pulse. The comparison of these two structures with the usually considered optimal fixed width waveguide shows that the SC is broader and flatter in the more elaborated DM waveguide, while the high coherence is ensured by the varying dispersion.
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