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Register a new userEfficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides
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Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $mu$m pump is converted to a 1.0 $mu$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{circ}$C with a slope of 0.24 nm/$^{circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.
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Periodically poled lithium niobate (PPLN) waveguide is a powerful platform for efficient wavelength conversion. Conventional PPLN converters however typically require long device lengths and high pump powers due to the limited nonlinear interaction strength. Here we use a nanostructured PPLN waveguides to demonstrate an ultrahigh normalized efficiency of 2600%/W-cm$^2$ for second-harmonic generation of 1.5-$mu$m radiation, more than 20 times higher than that in state-of-the-art diffused waveguides. This is achieved by a combination of sub-wavelength optical confinement and high-fidelity periodic poling at a first-order poling period of 4 $mu$m. Our highly integrated PPLN waveguides are promising for future chip-scale integration of classical and quantum photonic systems.
Second harmonic generation (SHG), as one of the most significant c{hi}(2) nonlinear optical processes, plays crucial roles in a broad variety of optical and photonic applications. Designing various delicate schemes to achieve highly efficient SHG has become a long standing and challenging topic in field of nonlinear optics. Despite numerous success on SHG based on birefringent phase matching and quasi-phase matching, so far, modal phase matching (MPM) for SHG in tightly light-confined structures has still in its infancy. Here, we propose a new scheme to realize highly-efficient SHG via MPM by using a nanophotonic LiNbO3 thin-film waveguide consists of two bonded layers with internally reversed polarizations. In such a dual-layer ridge waveguide based on lithium niobate on insulator, upon optical excitation at 1574.6 nm, we observe SHG at 787.3 nm with ultrahigh conversion efficiency of 5,540% /W/cm/cm experimentally. This work advances our understanding on modal-phase-matched SHG and other quadratic optical nonlinear process, offering additional strategies for development of high-performance nonlinear photonic devices in on-chip platforms.
We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200 meV below the GaAs bandgap, i.e. in the 910--970 nm wavelength range. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20 dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots, towards the realization of scalable quantum photonic integrated circuits.
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5$times10^{-7}$/W. Our results are promising for frequency conversion of on-chip integrated emitters having broad spectra or large inhomogeneous broadening, as well as for frequency conversion of ultrashort pulses.
We theoretically investigate second harmonic generation in extremely narrow, sub-wavelength semiconductor and dielectric waveguides. We discuss a novel guiding mechanism characterized by the inhibition of diffraction and the suppression of cut-off limits in the context of a light trapping phenomenon that sets in under conditions of general phase and group velocity mismatch between the fundamental and the generated harmonic.
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