Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userImproving Electric Contacts to Two-Dimensional Semiconductors
113
0
0.0
(
0
)
Added by
Saurabh Vinayak Suryavanshi
Publication date
2021
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates unique current crowding that leads to increased contact resistance. We developed a model to separate the contribution of the current crowding from the intrinsic contact resistivity. We show that current crowding can be alleviated by doping and contact patterning. Using Landauer-Buttiker formalism, we show that van der Waals (vdW) gap at the interface will ultimately limit the electrical contact resistance. We compare our models with experimental data for doped and undoped MoS_{2} FETs. Even with heavy charge-transfer doping of > 2x10^{13} cm^{-2}, we show that the state-of-the-art contact resistance is 100 times larger than the ballistic limit. Our study highlights the need to develop efficient interface to achieve contact resistance of < 10 {Omega}.{mu}m, which will be ideal for extremely scaled devices.
rate research
Read More
Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices.
We analyze the low-energy properties of two-dimensional direct-gap semiconductors, such as for example the transition-metal dichalcogenides MoS$_2$, WS$_2$, and their diselenide analogues MoSe$_2$, WSe$_2$, etc., which are currently intensively investigated. In general, their electrons have a mixed character -- they can be massive Dirac fermions as well as simple Schrodinger particles. We propose a measure (Diracness) for the degree of mixing between the two characters and discuss how this quantity can in principle be extracted experimentally, within magneto-transport measurements, and numerically via ab initio calculations.
The elementary optical excitations of a two-dimensional electron or hole system have been identified as exciton-Fermi-polarons. Nevertheless, the connection between the bound state of an exciton and an electron, termed trion, and exciton-polarons is subject of ongoing debate. Here, we use an analogy to the Tavis-Cummings model of quantum optics to show that an exciton-polaron can be understood as a hybrid quasiparticle -- a coherent superposition of a bare exciton in an unperturbed Fermi sea and a bright collective excitation of many trions. The analogy is valid to the extent that the Chevy Ansatz provides a good description of dynamical screening of excitons and provided the Fermi energy is much smaller than the trion binding energy. We anticipate our results to bring new insight that could help to explain the striking differences between absorption and emission spectra of two-dimensional semiconductors.
Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.
By performing high-throughput calculations using density functional theory combined with a semiempirical van der Waals dispersion correction, we screen 97 direct- and 253 indirect-gap two dimensional nonmagnetic semiconductors from near 1000 monolayers according to the energetic, thermodynamic, mechanical and dynamic stability criterions. We present the calculated results including lattice constants, formation energy, Youngs modulus, Poissons ratio, shear modulus, band gap, band structure, ionization energy and electron affinity for all the candidates satisfying our criteria.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
