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Register a new userDesigning Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers
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Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices.
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With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via strain and electric field, which is vital for practical applications, has not yet been explored. In this work, we show that the biaxial strain and external electric field are effective ways for the band gap engineering of bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$. It is found that strain can lead to indirect band gap to direct band gap transition. On the other hand, electric field can result in semiconductor to metal transition. Our study provides insights into the band structure engineering of bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ and would pave the way for its future nanoelectronics and optoelectronics applications.
Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices.
By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particle states of monolayer MoSi$_2$N$_4$, which can be generalized to strained MoSi$_2$N$_4$ and its derivatives. The calculations using the tight-binding model show an undamped $sqrt{q}$-dependent plasmon mode that agrees well with the results of first-principles calculations. Our model can be extended to be suitable for future theoretical and numerical studies of low-energy properties in MoSi$_2$N$_4$ family materials. Furthermore, the study of electronic properties of monolayer MoSi$_2$N$_4$ paves a way for its applications in spintronics and plasmonics.
To quantify charge transport through molecular junctions fabricated using the conducting probe atomic force microscopy (CP-AFM) platform, information on the number of molecules $N$ per junction is absolutely necessary. $N$ can be currently obtained only via contact mechanics, and the Youngs modulus $E$ of the self-assembled monolayer (SAM) utilized in the key quantity for this approach. The experimental determination of $E$ for SAMs of CP-AFM junctions fabricated using oligophenylene dithiols (OPDn, $1 leq n leq 4$) and gold electrodes turned out to be too challenging. Recent measurements (Z. Xie et al, J. Am. Chem. Soc. 139 (2017) 5696) merely succeeded to provide a low bound estimate ($E approx 58,$GPa). It is this state of affairs that motivated the present theoretical investigation. Our microscopic calculations yield values $E approx 240 pm 6,$GPa for the OPDn SAMs of the aforementioned experimental study, which are larger than those of steel ($ E approx 180 - 200,$GPa) and silicon ($E approx 130 - 185,$GPa). The fact that the presently computed $E$ is much larger than the aforementioned experimental lower bound explain why experimentally measuring $E$ of OPDn SAMs is so challenging. Having $E approx 337 pm 8,$GPa, OPDn SAMs with herringbone arrangement adsorbed on fcc (111)Au are even stiffer than Si$_3$N$_4$ ($E approx 160 - 290,$GPa).
Recently, An electron-doped 12442-type iron-based superconductor BaTh$_2$Fe$_4$As$_4$(N$_{0.7}$O$_{0.3}$)$_2$ has been successfully synthesized with high-temperature solid-state reactions on basis of a structural design. The inter-block-layer charge transfer between the constituent units of BaFe$_2$As$_2$ and ThFeAsN$_{0.7}$O$_{0.3}$ was found to be essential to stabilize the target compound. Dominant electron-type conduction and bulk superconducting transition at ~22 K were demonstrated.
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