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Radiative thermal rectification in many-body systems

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 Added by Ivan Latella
 Publication date 2021
  fields Physics
and research's language is English




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Radiative thermal diodes based on two-element structures rectify heat flows thanks to a temperature dependence of material optical properties. The heat transport asymmetry through these systems, however, remains weak without a significant change in material properties with the temperature. Here we explore the heat transport in three-element radiative systems and demonstrate that a strong asymmetry in the thermal conductance can appear because of many-body interactions, without any dependence of optical properties on the temperature. The analysis of transport in three-body systems made with polar dielectrics and metallic layers reveals that rectification coefficients exceeding 50 % can be achieved in the near-field regime with temperature differences of about 200 K. This work paves the way for compact devices to rectify near field radiative heat fluxes over a broad temperature range and could have important applications in the domain of nanoscale thermal management.

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By means of fluctuationnal electrodynamics, we calculate radiative heat flux between two pla-nar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit a thermal rectification, a property with potential applications in thermal regulation. Rectification variations with temperature and separation distance are here reported. Calculations are performed using material optical data experimentally determined by Fourier transform emission spectrometry of heated materials between ambient temperature (around 300 K) and 1480 K. It is shown that rectification is much more important in the near-field domain, i.e. at separation distances smaller than the thermal wavelength. In addition, we see that the larger is the temperature difference, the larger is rectification. Large rectification is finally interpreted due to a weakening of the SiC surface polariton when temperature increases, a weakening which affects much less SiO2 resonances.
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