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Register a new userQuantum oscillations in monoclinic SrIrO$_3$: non-trivial topology and strong electron correlations in a three-dimensional Dirac semimetal
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We report the observation of Shubnikov-de Haas oscillations in bulk single crystals of monoclinic SrIrO$_3$ in magnetic fields up to 35 T. Analysis of the oscillations reveals a Fermi surface comprising multiple small pockets with effective masses up to five times larger than the calculated band mass. Phase analysis of the oscillations indicates non-trivial topological character of the dominant orbit while ab-initio calculations reveal robust linear band-crossings at the Brillouin zone boundary. These collective findings, coupled with knowledge of the evolution of the electronic state across the Ruddlesden-Popper iridate series, establishes monoclinic SrIrO$_3$ as a topological semimetal on the boundary of the Mott metal-insulator transition.
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SrIrO$_3$ crystallizes in a monoclinic structure of distorted hexagonal perovskite at ambient pressure. The transport measurements show that the monoclinic SrIrO$_3$ is a low-carrier density semimetal, as in the orthorhombic perovskite polymorph. The electronic structure calculation indicates a semimetallic band structure with Dirac bands at two high-symmetry points of Brillouin zone only when spin-orbit coupling is incorporated, suggesting that the semimetallic state is produced by the strong spin-orbit coupling. We argue that the Dirac bands are protected by the non-symmorphic symmetry of lattice.
The interplay of electronic correlations, multi-orbital excitations, and strong spin-orbit coupling is a fertile ground for new states of matter in quantum materials. Here, we report on a confocal Raman scattering study of momentum-resolved charge dynamics from a thin film of semimetallic perovskite $mathbf{SrIrO_3}$. We demonstrate that the charge dynamics, characterized by a broad continuum, is well described in terms of the marginal Fermi liquid phenomenology. In addition, over a wide temperature regime, the inverse scattering time is for all momenta close to the Planckian limit $mathbf{tau^{-1}_{hbar}=k_{rm B} T/hbar}$. Thus, $mathbf{SrIrO_3}$ is a semimetallic multi-band system that is as correlated as, for example, the cuprate superconductors. The usual challenge to resolve the charge dynamics in multi-band systems with very different mobilities is circumvented by taking advantage of the momentum space selectivity of polarized electronic Raman scattering. The Raman responses of both hole- and electron-pockets display an electronic continuum extending far beyond 1000icm ($sim$125 meV), much larger than allowed by the phase space for creating particle-hole pairs in a regular Fermi liquid. Analyzing this response in the framework of a memory function formalism, we are able to extract the frequency dependent scattering rate and mass enhancement factor of both types of charge carriers, which in turn allows us to determine the carrier-dependent mobilities and electrical resistivities. The results are well consistent with transport measurement and demonstrate the potential of this approach to investigate the charge dynamics in multi-band systems.
We report observations of magnetoresistance, quantum oscillations and angle-resolved photoemission in RhSb$_3$, a unfilled skutterudite semimetal with low carrier density. The calculated electronic band structure of RhSb$_3$ entails a $Z_2$ quantum number $ u_0=0, u_1= u_2= u_3=1$ in analogy to strong topological insulators, and inverted linear valence/conduction bands that touch at discrete points close to the Fermi level, in agreement with angle-resolved photoemission results. Transport experiments reveal an unsaturated linear magnetoresistance that approaches a factor of 200 at 60 T magnetic fields, and quantum oscillations observable up to 150~K that are consistent with a large Fermi velocity ($sim 1.3times 10^6$ ms$^{-1}$), high carrier mobility ($sim 14$ $m^2$/Vs), and small three dimensional hole pockets with nontrivial Berry phase. A very small, sample-dependent effective mass that falls as low as $0.015(7)$ bare masses scales with Fermi velocity, suggesting RhSb$_3$ is a new class of zero-gap three-dimensional Dirac semimetal.
We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order.
A study of the Fermi surface of the putative topological semimetal Pd$_3$Pb has been carried out using Shubnikov-de Haas (SdH) oscillations measured in fields of up to 60 T. Pd$_3$Pb has garnered attention in the community due to a peculiar Fermi surface that has been proposed theoretically by Ahn, Pickett, and Lee, [Phys. Rev. B 98, 035130 (2018)] to host a dispersion-less band along $X-Gamma$ as well as multiple triply-degenerate band crossings that, under the influence of spin-orbit coupling, lead to ten four-fold degenerate Dirac points. Analysis of the SdH oscillation data verifies the calculated multi-sheet Fermi surface, revealing a $Gamma$ centered spheroid that had not been resolved experimentally in prior studies. A comprehensive, angle-dependent analysis of the phase of the SdH oscillations convincingly demonstrates a non-trivial Berry phase for two bands along $Gamma-R$, supporting the theoretical predictions, while simultaneously evidencing interference between extremal orbits that mimics a trivial Berry phase at intermediate angles.
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