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Strange semimetal dynamics in SrIrO$_3$

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 Added by Matthieu Le Tacon
 Publication date 2020
  fields Physics
and research's language is English




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The interplay of electronic correlations, multi-orbital excitations, and strong spin-orbit coupling is a fertile ground for new states of matter in quantum materials. Here, we report on a confocal Raman scattering study of momentum-resolved charge dynamics from a thin film of semimetallic perovskite $mathbf{SrIrO_3}$. We demonstrate that the charge dynamics, characterized by a broad continuum, is well described in terms of the marginal Fermi liquid phenomenology. In addition, over a wide temperature regime, the inverse scattering time is for all momenta close to the Planckian limit $mathbf{tau^{-1}_{hbar}=k_{rm B} T/hbar}$. Thus, $mathbf{SrIrO_3}$ is a semimetallic multi-band system that is as correlated as, for example, the cuprate superconductors. The usual challenge to resolve the charge dynamics in multi-band systems with very different mobilities is circumvented by taking advantage of the momentum space selectivity of polarized electronic Raman scattering. The Raman responses of both hole- and electron-pockets display an electronic continuum extending far beyond 1000icm ($sim$125 meV), much larger than allowed by the phase space for creating particle-hole pairs in a regular Fermi liquid. Analyzing this response in the framework of a memory function formalism, we are able to extract the frequency dependent scattering rate and mass enhancement factor of both types of charge carriers, which in turn allows us to determine the carrier-dependent mobilities and electrical resistivities. The results are well consistent with transport measurement and demonstrate the potential of this approach to investigate the charge dynamics in multi-band systems.



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We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order.
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The 5$d$ based SrIrO$_3$ represents prototype example of nonmagnetic correlated metal which mainly originates from a combined effect of spin-orbit coupling, lattice dimensionality and crystal structure. Therefore, tuning of these parameters results in diverse physical properties in this material. Here, we study the structural, magnetic and electrical transport behavior in epitaxial SrIrO$_3$ film ($sim$ 40 nm) grown on SrTiO$_3$ substrate. Opposed to bulk material, the SrIrO$_3$ film exhibits a ferromagnetic ordering at low temperature below $sim$ 20 K. The electrical transport data indicate an insulating behavior where the nature of charge transport follows Motts variable-range-hopping model. A positive magnetoresistance is recorded at 2 K which has correlation with magnetic moment. We further observe a nonlinear Hall effect at low temperature ($<$ 20 K) which arises due to an anomalous component of Hall effect. An anisotropic behavior of both magnetoresistance and Hall effect has been evidenced at low temperature which coupled with anomalous Hall effect indicate the development of ferromagnetic ordering. We believe that an enhanced (local) structural distortion caused by lattice strain at low temperatures induces ferromagnetic ordering, thus showing structural instability plays vital role to tune the physical properties in SrIrO$_3$.
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Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO$_3$ and paramagnetic SrIrO$_3$ over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO$_3$, ending up with the complete disappearance at 7 unit cells of SrRuO$_3$. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit coupling of SrIrO$_3$. Such interaction is expected to realize the N{e}el-type magnetic skyrmion, of which size is estimated to be $sim$10 nm from the magnitude of topological Hall resistivity. The results established that the high-quality oxide interface enables us to tune the chirality of the system; this can be a step towards the future topological electronics.
We report the observation of Shubnikov-de Haas oscillations in bulk single crystals of monoclinic SrIrO$_3$ in magnetic fields up to 35 T. Analysis of the oscillations reveals a Fermi surface comprising multiple small pockets with effective masses up to five times larger than the calculated band mass. Phase analysis of the oscillations indicates non-trivial topological character of the dominant orbit while ab-initio calculations reveal robust linear band-crossings at the Brillouin zone boundary. These collective findings, coupled with knowledge of the evolution of the electronic state across the Ruddlesden-Popper iridate series, establishes monoclinic SrIrO$_3$ as a topological semimetal on the boundary of the Mott metal-insulator transition.
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