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Register a new userFlicker Noise in Two-Dimensional Electron Gas
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Using the method developed in a recent paper (Euro. Phys. J. B 92.8 (2019): 1-28) we consider $1/f$ noise in two-dimensional electron gas (2DEG). The electron coherence length of the system is considered as a basic parameter for discretizing the space, inside which the dynamics of electrons is described by quantum mechanics, while for length scales much larger than it the dynamics is semi-classical. For our model, which is based on the Thomas-Fermi-Dirac approximation, there are two control parameters: temperature $T$ and the disorder strength ($Delta$). Our Monte Carlo studies show that the system exhibits $1/f$ noise related to the electronic avalanche size, which can serve as a model for describing the experimentally observed flicker noise in 2DEG. The power spectrum of our model scales with frequency with an exponent in the interval $0.3<alpha_{PS}<0.6$. We numerically show that the electronic avalanches are scale-invariant with power-law behaviors in and out of the metal-insulator transition line.
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High-mobility 2D electron systems in a perpendicular magnetic field exhibit zero resistance states (ZRS) when driven with microwave radiation. We study the nonequilibrium phase transition into this ZRS using phenomenological equations of motion to describe the current and density fluctuations. We focus on two models for the transition into a time-independent steady state. Model-I assumes rotational invariance, density conservation, and symmetry under shifting the density globally by a constant. This model is argued to describe physics on small length scales where the density does not vary appreciably from its mean. The ordered state that arises in this case breaks rotational invariance and consists of a uniform current and transverse Hall field. We discuss some properties of this state, such as stability to fluctuations and the appearance of a Goldstone mode associated with the continuous symmetry breaking. Using dynamical renormalization group techniques, we find that with short-range interactions this model can admit a continuous transition described by mean-field theory, whereas with long-range interactions the transition is driven first-order. Model-II, which assumes only rotational invariance and density conservation and is argued to be appropriate on longer length scales, is shown to predict a first-order transition with either short- or long-range interactions. We discuss implications for experiments, including scaling relations and a possible way to detect the Goldstone mode in the case of a continuous transition into the ZRS, as well as possible signatures of a first-order transition in larger samples. We also point out the connection of our work to the well-studied phenomenon of `flocking.
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.
We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life-time suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2 ps$^{-1}$. We also obtain the Fermi level at the In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As surface to be 0.36eV above the conduction band, when fitting our experimental densities with a Poisson-Schrodinger model.
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beams injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).
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