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Register a new userTwo-Dimensional Electron Gas in InGaAs/InAlAs Quantum Wells
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We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life-time suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2 ps$^{-1}$. We also obtain the Fermi level at the In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As surface to be 0.36eV above the conduction band, when fitting our experimental densities with a Poisson-Schrodinger model.
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We report observation of magneto-electric photocurrent generated via direct inter-band transitions in an InGaAs/InAlAs two-dimensional electron gas excited by a linearly polarized incident light.The electric current is proportional to the in-plane magnetic field which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates electric current from a spin photocurrent. The observed light polarization dependence of the electric current is explained microscopically by taking into account of the anisotropy of the photoexcited carrier density in wave vector space. The spin photocurrent can be extracted from the measured current and the conversion coefficient of spin photocurrent to electric current is estimated to be $10^{-3}$$sim$$10^{-2}$ per Tesla.
We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and anti-localization but its quantity exceeds significantly the scale of the quantum corrections. The calculations show that the obtained data can be explained by the classical effects in electron motion along the open orbits in a quasiperiodic potential relief manifested by the presence of ridges on the quantum well surface.
Converse effect of spin photocurrent and current induced spin polarization are experimentally demonstrated in the same two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin polarization and spin orbit coupling. In addition, the observed spectral inversion of the spin photocurrent indicates the system with dominating structure inversion asymmetry.
Polariton lattice condensates provide a platform for on chip quantum emulations. Interactions in extended polariton lattices are currently limited by the intrinsic photonic disorder of microcavities. Here, we fabricate a strain compensated planar GaAs/AlAs microcavity with embedded InGaAs quantum wells and report on polariton condensation under non-resonant optical excitation. Evidence of polariton condensation is supported spectroscopically both in reflection and transmission geometry, whilst the observation of a second threshold to photon lasing allows us to conclusively distinguish between the strong- and weak-coupling non-linear regimes.
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with the excited subband by applying a dc voltage. Direct evidence for this effect is obtained from low-temperature photoluminescence spectra which display the sudden renormalization of the intersubband energy $E_{01}$ upon the abrupt occupation of the first excited subband. Calculations within density-functional theory, which treat the 2D exchange potential {it exactly}, show that this thermodynamical instability of the electron system is mainly driven by {it intersubband} terms of the exchange Coulomb interaction. From temperature-dependent measurements the existence of a critical point at $T_c = 35pm 5$ K is inferred.
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