No Arabic abstract
We study backscattering of electrons and conductance suppression in a helical edge channel in two-dimensional topological insulators with broken axial spin symmetry in the presence of nonmagnetic point defects that create bound states. In this system the tunneling coupling of the edge and bound states results in the formation of composite helical edge states in which all four partners of both Kramers pairs of the conventional helical edge states and bound states are mixed. The backscattering is considered as a result of inelastic two-particle scattering of electrons, which are in these composite states. Within this approach we find that sufficiently strong backscattering occurs even if the defect creates only one energy level. The effect is caused by electron transitions between the composite states with energy near the bound state level. We study the deviation from the quantized conductance due to scattering by a single defect as a function of temperature and Fermi level. The results are generalized to the case of scattering by many different defects with energy levels distributed over the band gap. In this case, the conductance deviation turns out to be quite strong and comparable with experiment even at a sufficiently low density of defects. Interestingly, under certain conditions, the temperature dependence of the conductance deviation becomes very weak over a wide temperature range.
A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and manipulated on macroscopic length scales, for instance across the gate channel of a spin-transistor. Here, we report on millimeter-scale edge channels with a conductance quantized at a single quantum 1 $times$ $e^2/h$ at zero magnetic field. The quantum transport is found at the lateral edges of three-dimensional topological insulators made of bismuth chalcogenides. The data are explained by a lateral, one-dimensional quantum confinement of non-topological surface states with a strong Rashba spin-orbit coupling. This edge transport can be switched on and off by an electrostatic field-effect. Our results are fundamentally different from an edge transport in quantum spin Hall insulators and quantum anomalous Hall insula-tors.
We propose a surface-edge state theory for half quantized Hall conductance of surface states in topological insulators. The gap opening of a single Dirac cone for the surface states in a weak magnetic field is demonstrated. We find a new surface state resides on the surface edges and carries chiral edge current, resulting in a half-quantized Hall conductance in a four-terminal setup. We also give a physical interpretation of the half quantized conductance by showing that this state is the product of splitting of a boundary bound state of massive Dirac fermions which carries a conductance quantum.
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposite spin, that are topologically protected from backscattering. Two basic features are supposed to confirm the existence of the ballistic edge channels in the submicrometer limit: the 4-terminal conductance is expected to be quantized at the universal value $2e^{2}/h$, and a nonlocal signal should appear due to a net current along the sample edge, carried by the helical states. On the other hand for longer channels the conductance has been found to deviate from the quantized value. This article reviewer the experimental and theoretical work related to the transport in two-dimensional topological insulators (2D-TI), based on HgTe quantum wells in zero magnetic field. We provide an overview of the basic mechanisms predicting a deviation from the quantized transport due to backscattering (accompanied by spin-flips) between the helical channels. We discuss the details of the model, which takes into account the edge and bulk contribution to the total current and reproduces the experimental results.
We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same fermi energy. Due to edge-bulk backscattering (which is not prohibited emph{a priori} by topology or symmetry), Anderson disorder makes the edge and bulk states localized indistinguishably. Two methods are proposed to effectively decouple them and to restore robust transport. The first kind of decouple is from long range disorder, since edge and bulk states are well separated in $k$ space. The second one is from an edge gating, owing to the edge nature of edge states in real space. The latter can be used to electrically tune a system between an Anderson insulator and a topologically robust conductor, i.e., a realization of a topological transistor.
We develop a theory of electron-photon interaction for helical edge channels in two-dimensional topological insulators based on zinc-blende-type quantum wells. It is shown that the lack of space inversion symmetry in such structures enables the electro-dipole optical transitions between the spin branches of the topological edge states. Further, we demonstrate the linear and circular dichroism associated with the edge states and the generation of edge photocurrents controlled by radiation polarization.