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Register a new userUsing silicon-vacancy centers in diamond to probe the full strain tensor
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An ensemble of silicon vacancy centers in diamond (ce{SiV-}) is probed using two coherent spectroscopy techniques. Two main distinct families of ce{SiV-} centers are identified using multidimensional coherent spectroscopy, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Such measurements are made at multiple points on the sample surface and variations in the strain tensor are observed.
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We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
Vacancy centers in diamond have proven to be a viable solid-state platform for quantum coherent opto-electronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an inversion-symmetric system that is less susceptible to electron-phonon interactions. Nevertheless, phonon-mediated processes still degrade the coherent properties of SiV centers, however characterizing their electron-phonon coupling is extremely challenging due to their weak spectroscopic signatures and remains an open experimental problem. In this paper we theoretically investigate signatures of electron-phonon coupling in simulated linear and nonlinear spectra of SiV centers. We demonstrate how even extremely weak electron-phonon interactions, such as in SiV centers, may be completely characterized via nonlinear spectroscopic techniques and even resolved between different fine-structure transitions.
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV$^-$ on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV$^-$ centers. Scanning confocal photoluminescence measurements reveal optically active SiV$^-$ lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV$^-$ centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.
Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of the NV- centers. The hyperfine spectrum from 15NV- arising from implanted 15N can be distinguished from 14NV- centers created by native 14N (I = 1) sites. Analysis indicates 1 in 40 implanted 15N atoms give rise to an optically observable 15NV- center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.
Stress and strain are important factors in determining the mechanical, electronic, and optical properties of materials, relating to each other by the materials elasticity or stiffness. Both are represented by second rank field tensors with, in general, six independent components. Measurements of these quantities are usually achieved by measuring a property that depends on the translational symmetry and periodicity of the crystal lattice, such as optical phonon energies using Raman spectroscopy, the electronic band gap using cathodoluminescence, photoelasticity via the optical birefringence, or Electron Back Scattering Diffraction (EBSD). A reciprocal relationship therefore exists between the maximum sensitivity of the measurements and the spatial resolution. Furthermore, of these techniques, only EBSD and off-axis Raman spectroscopy allow measurement of all six components of the stress tensor, but neither is able to provide full 3D maps. Here we demonstrate a method for measuring the full stress tensor in diamond, using the spectral and optical polarization properties of the photoluminescence from individual nitrogen vacancy (NV) colour centres. We demonstrate a sensitivity of order 10 MPa, limited by local fluctuations in the stress in the sample, and corresponding to a strain of about 10^-5, comparable with the best sensitivity provided by other techniques. By using the colour centres as built-in local sensors, the technique overcomes the reciprocal relationship between spatial resolution and sensitivity and offers the potential for measuring strains as small as 10^-9 at spatial resolution of order 10 nm. Furthermore it provides a straightforward route to volumetric stress mapping. Aside from its value in understanding strain distributions in diamond, this new approach to stress and strain measurement could be adapted for use in micro or nanoscale sensors.
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