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Register a new userHybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers
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Added by
Jingyuan Linda Zhang
Publication date
2015
fields
Physics
and research's language is
English
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We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV$^-$ on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV$^-$ centers. Scanning confocal photoluminescence measurements reveal optically active SiV$^-$ lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV$^-$ centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.
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Quantum photonics plays a crucial role in the development of novel communication and sensing technologies. Color centers hosted in silicon carbide and diamond offer single photon emission and long coherence spins that can be scalably implemented in quantum networks. We develop systems that integrate these color centers with photonic devices that modify their emission properties through electromagnetically tailored light and matter interaction.
The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for quantum information applications since only the silicon 29 isotope has nuclear spin. In addition, we demonstrate that the 64 meV line is due to a local vibrational mode of the silicon atom. The presence of a local mode suggests a plausible origin of the isotopic shift of the zero phonon line.
The hyperfine interaction is an important probe for understanding the structure and symmetry of defects in a semiconductor. Density-functional theory has shown that it can provide useful first-principles predictions for both the hyperfine tensor and the hyperfine constants that arise from it. Recently there has been great interest in using group-IV impurity-vacancy color centers X$V^-$ (where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy) for important applications in quantum computing and quantum information science. In this paper, we have calculated the hyperfine tensors for these X$V^-$ color centers using the HSE06 screened Hartree-Fock hybrid exchange-correlation functional with the inclusion of core electron spin polarization. We have compared our results to calculations which only use the PBE exchange-correlation functional without the inclusion of core electron spin polarization and we have found our results are in very good agreement with available experimental results. Finally, we have theoretically shown that these X$V^-$ color centers exhibit a Jahn-Teller distortion which explains the observed anisotropic distribution of the hyperfine constants among the neighboring $^{13}$C nuclear spins.
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
We review recent advances towards the realization of quantum networks based on atom-like solid-state quantum emitters coupled to nanophotonic devices. Specifically, we focus on experiments involving the negatively charged silicon-vacancy color center in diamond. These emitters combine homogeneous, coherent optical transitions and a long-lived electronic spin quantum memory. We discuss optical and spin properties of this system at cryogenic temperatures and describe experiments where silicon-vacancy centers are coupled to nanophotonic devices. Finally, we discuss experiments demonstrating quantum nonlinearities at the single-photon level and two-emitter entanglement in a single nanophotonic device.
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