No Arabic abstract
Silicate ceramics are of considerable promise as high frequency dielectrics in emerging millimetre wave applications including high bandwidth wireless communication and sensing. In this review, we show how high quality factors and low, thermally stable permittivities arise in ordered silicate structures. On the basis of a large number of existing studies, the dielectric performance of silicate ceramics is comprehensively summarized and presented, showing how microstructure and SiO4 tetrahedral connectivity affect polarizability and dielectric losses. We critically examine the appropriateness of silicate materials in future applications as effective millimetre wave dielectrics with low losses and tuneable permittivities. The development of new soft chemistry based processing routes for silicate dielectric ceramics is identified as being instrumental towards the reduction of processing temperatures, thus enabling silicate ceramics to be co-fired in the production of components functioning in the mm wave regime.
Dielectric and magnetic properties of Eu0.5Ba0.25Sr0.25TiO3 are investigated between 10 K and 300 K in the frequency range from 10 Hz to 100 THz. A peak in permittivity revealed near 130 K and observed ferroelectric hysteresis loops prove the ferroelectric order below thistemperature. The peak in permittivity is given mainly by softening of the lowest frequency polar phonon (soft mode revealed in THz and IR spectra) that demonstrates displacive character of the phase transition. Room-temperature X-ray diffraction analysis reveals cubic structure, but the IR reflectivity spectra give evidence of a lower crystal structure, presumably tetragonal I4/mcm with tilted oxygen octahedra as it has been observed in EuTiO3. The magnetic measurements show that the antiferromagnetic order occurs below 1.8 K. Eu0.5Ba0.25Sr0.25TiO3 has three times lower coercive field than Eu0.5Ba0.5TiO3, therefore we propose this system for measurements of electric dipole moment of electron.
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional theory. The resistivity scaling potential of these compounds, i.e. the sensitivity of their resistivity to reduced line dimensions, has been benchmarked against Cu and Ru by evaluating their transport properties within a semiclassical transport formalism. In addition, their cohesive energy has been assessed as a proxy for the resistance against electromigration and the need for diffusion barriers. The results indicate that numerous MAX phases show promise as conductors in interconnects of advanced CMOS technology nodes.
The quasi-optical modulation of linear polarization at millimeter and sub-millimeter wavelengths can be achieved by using rotating half wave plates (HWPs) in front of polarization sensitive detectors. Large operational bandwidths are required when the same device is meant to work simultaneously across different frequency bands. Previous realizations of half wave plates, ranging from birefringent multi-plate to mesh-based devices, have achieved bandwidths of the order of 100%. Here we present the design and the experimental characterization of a reflective HWP able to work across bandwidths of the order of 150%. The working principle of the novel device is completely different from any previous realization and it is based on the different phase-shift experienced by two orthogonal polarizations respectively reflecting off an electric conductor and off an artificial magnetic conductor.
A correlation between structure and vibrational properties related to a ferroelectric to paraelectric phase transition in perovskite Pb(1-x)(Na0.5Sm0.5)xTiO3 (PNST - x) polycrystalline powders is discussed. Substitution leads to reduction of tetragonality which is associated with a shift of the phase transition to lower temperatures. The nature of the phase transition gets diffused with increasing substitution.
We have measured dielectric properties of Ca$_{1+x}$Cu$_{3-x}$Ti$_4$O$_{12}$ ($x$ = 0, 0.1, 0.5, 1, 1.5, 2, 2.9 and 3), and have found that Ca$_2$Cu$_2$Ti$_4$O$_{12}$ (a composite of CaCu$_3$Ti$_4$O$_{12}$ and CaTiO$_3$) exhibits a high dielectric constant of 1800 with a low dissipation factor of 0.02 below 100 kHz from 220 to 300 K. These are comparable to (or even better than) those of the Pb/Ba-based ceramics, which could be attributed to a barrier layer of CaTiO$_3$ on the surface of the CaCu$_3$Ti$_4$O$_{12}$ grains. The composite dielectric ceramics reported here are environmentally benign as they do not contain Ba/Pb.