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Register a new userMachine-learned prediction of the electronic fields in a crystal
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We propose an approach for exploiting machine learning to approximate electronic fields in crystalline solids subjected to deformation. Strain engineering is emerging as a widely used method for tuning the properties of materials, and this requires repeated density functional theory calculations of the unit cell subjected to strain. Repeated unit cell calculations are also required for multi-resolution studies of defects in crystalline solids. We propose an approach that uses data from such calculations to train a carefully architected machine learning approximation. We demonstrate the approach on magnesium, a promising light-weight structural material: we show that we can predict the energy and electronic fields to the level of chemical accuracy, and even capture lattice instabilities.
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Lattice constants such as unit cell edge lengths and plane angles are important parameters of the periodic structures of crystal materials. Predicting crystal lattice constants has wide applications in crystal structure prediction and materials property prediction. Previous work has used machine learning models such as neural networks and support vector machines combined with composition features for lattice constant prediction and has achieved a maximum performance for cubic structures with an average $R^2$ of 0.82. Other models tailored for special materials family of a fixed form such as ABX3 perovskites can achieve much higher performance due to the homogeneity of the structures. However, these models trained with small datasets are usually not applicable to generic lattice parameter prediction of materials with diverse compositions. Herein, we report MLatticeABC, a random forest machine learning model with a new descriptor set for lattice unit cell edge length ($a,b,c$) prediction which achieves an R2 score of 0.979 for lattice parameter $a$ of cubic crystals and significant performance improvement for other crystal systems as well. Source code and trained models can be freely accessed at https://github.com/usccolumbia/MLatticeABC
High-throughput density-functional calculations of solids are extremely time consuming. As an alternative, we here propose a machine learning approach for the fast prediction of solid-state properties. To achieve this, LSDA calculations are used as training set. We focus on predicting metallic vs. insulating behavior, and on predicting the value of the density of electronic states at the Fermi energy. We find that conventional representations of the input data, such as the Coulomb matrix, are not suitable for the training of learning machines in the case of periodic solids. We propose a novel crystal structure representation for which learning and competitive prediction accuracies become possible within an unrestricted class of spd systems. Due to magnetic phenomena learning on d systems is found more difficult than in pure sp systems.
Crystal structure prediction is now playing an increasingly important role in discovery of new materials. Global optimization methods such as genetic algorithms (GA) and particle swarm optimization (PSO) have been combined with first principle free energy calculations to predict crystal structures given composition or only a chemical system. While these approaches can exploit certain crystal patterns such as symmetry and periodicity in their search process, they usually do not exploit the large amount of implicit rules and constraints of atom configurations embodied in the large number of known crystal structures. They currently can only handle crystal structure prediction of relatively small systems. Inspired by the knowledge-rich protein structure prediction approach, herein we explore whether known geometric constraints such as the atomic contact map of a target crystal material can help predict its structure given its space group information. We propose a global optimization based algorithm, CMCrystal, for crystal structure reconstruction based on atomic contact maps. Based on extensive experiments using six global optimization algorithms, we show that it is viable to reconstruct the crystal structure given the atomic contact map for some crystal materials but more constraints are needed for other target materials to achieve successful reconstruction. This implies that atomic interaction information learned from existing materials can be used to improve crystal structure prediction.
Transition metal nitrides have been suggested to have both high hardness and good thermal stability with large potential application value, but so far stable superhard transition metal nitrides have not been synthesized. Here, with our newly developed machine-learning accelerated crystal structure searching method, we designed a superhard tungsten nitride, h-WN6, which can be synthesized at pressure around 65 GPa and quenchable to ambient pressure. This h-WN6 is constructed with single-bonded N6 rings and presents ionic-like features, which can be formulated as W2.4+N62.4-. It has a band gap of 1.6 eV at 0 GPa and exhibits an abnormal gap broadening behavior under pressure. Excitingly, this h-WN6 is found to be the hardest among transition metal nitrides known so far (Vickers hardness around 57 GPa) and also has a very high melting temperature (around 1900 K). These predictions support the designing rules and may stimulate future experiments to synthesize superhard material.
The ability to predict the likelihood of impurity incorporation and their electronic energy levels in semiconductors is crucial for controlling its conductivity, and thus the semiconductors performance in solar cells, photodiodes, and optoelectronics. The difficulty and expense of experimental and computational determination of impurity levels makes a data-driven machine learning approach appropriate. In this work, we show that a density functional theory-generated dataset of impurities in Cd-based chalcogenides CdTe, CdSe, and CdS can lead to accurate and generalizable predictive models of defect properties. By converting any semiconductor + impurity system into a set of numerical descriptors, regression models are developed for the impurity formation enthalpy and charge transition levels. These regression models can subsequently predict impurity properties in mixed anion CdX compounds (where X is a combination of Te, Se and S) fairly accurately, proving that although trained only on the end points, they are applicable to intermediate compositions. We make machine-learned predictions of the Fermi-level dependent formation energies of hundreds of possible impurities in 5 chalcogenide compounds, and suggest a list of impurities which can shift the equilibrium Fermi level in the semiconductor as determined by the dominant intrinsic defects. These dominating impurities as predicted by machine learning compare well with DFT predictions, revealing the power of machine-learned models in the quick screening of impurities likely to affect the optoelectronic behavior of semiconductors.
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