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Register a new userDynamics and control of nonradiative excitons - free carriers mixture in GaAs/AlGaAs quantum wells
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Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by means of the non-degenerate pump-probe spectroscopy. The exciton dynamics is visualized via the dynamic broadening of the heavy-hole and light-hole exciton resonances caused by the exciton-exciton scattering. Under the non-resonant excitation free carriers are optically generated. In this regime the exciton dynamics is strongly affected by the exciton-carrier scattering. In particular, if the carriers of one sign are prevailing, they efficiently deplete the reservoir of the nonradiative excitons inducing their scattering into the light cone. A simple model of the exciton dynamics is developed, which considers the energy relaxation of photocreated electrons and holes, their coupling into excitons, and exciton scattering into the light cone. The model well reproduces the exciton dynamics observed experimentally both at the resonant and nonresonant excitation. Moreover, it correctly describes the profiles of the photoluminescence pulses studied experimentally. The efficient exciton-electron interaction is further experimentally verified by the control of the exciton density in the reservoir when an additional excitation creates electrons depleting the reservoir.
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Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a function of temperature, while the linewidths demonstrate a complex and peculiar behavior. At low pumping the widths of all peaks remain quite narrow ($< 0.1$ meV) in the whole temperature range studied, $4 - 30K$. At the stronger pumping, the linewidth first increases and than drops down with the temperature rise. Pump-probe experiments show two characteristic time scales in the exciton decay, $< 10$ps and $15 - 45ns$, respectively. We interpret all these data by an interplay between the exciton recombination within the light cone, the exciton relaxation from a non-radiative reservoir to the light cone, and the thermal dissociation of the non-radiative excitons. The broadening of the low energy exciton lines is governed by the radiative recombination and scattering with reservoir excitons while for the higher energy states the linewidths are also dependent on the acoustic phonon relaxation processes.
We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $left < 1bar{1}0 right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along $left < 110 right >$ direction and can be reoriented only perpendicular to $B_{||}$. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to $B_{||}$, while quantum confinement of the 2DEG likely plays an important role.
Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between these subbands as well as the intersubband scattering rate are determined.
The magnetic field dependence of the excitonic states in unstrained GaAs/AlGaAs quantum dots is investigated theoretically and experimentally. The diamagnetic shift for the ground and the excited states are studied in magnetic fields of varying orientation. In the theoretical study, calculations are performed within the single band effective mass approximation, including band nonparabolicity, the full experimental three-dimensional dot shape and the electron-hole Coulomb interaction. These calculations are compared with the experimental results for both the ground and the excited states in fields up to 50 Tesla. Good agreement is found between theory and experiment.
We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photo-thermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.
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