Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userIntersubband scattering in n-GaAs/AlGaAs wide quantum wells
381
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between these subbands as well as the intersubband scattering rate are determined.
rate research
Read More
Oscillations of the real component of AC conductivity $sigma_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.
We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $left < 1bar{1}0 right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along $left < 110 right >$ direction and can be reoriented only perpendicular to $B_{||}$. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to $B_{||}$, while quantum confinement of the 2DEG likely plays an important role.
We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photo-thermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.
The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the $i^{th}$ and $j^{th}$ subbands are observed and obey the relation $Delta_{ij}=E_j-E_i=kcdothbaromega_c$, where $omega_c$ is the cyclotron frequency and $k$ is an integer. An application of in-plane magnetic field produces dramatic changes in MISO and the corresponding electron spectrum. Three regimes are identified. At $hbaromega_c ll Delta_{12}$ the in-plane magnetic field increases considerably the gap $Delta_{12}$, which is consistent with the semi-classical regime of electron propagation. In contrast at strong magnetic fields $hbaromega_c gg Delta_{12}$ relatively weak oscillating variations of the electron spectrum with the in-plane magnetic field are observed. At $hbaromega_c approx Delta_{12}$ the electron spectrum undergoes a transition between these two regimes through magnetic breakdown. In this transition regime MISO with odd quantum number $k$ terminate, while MISO corresponding to even $k$ evolve $continuously$ into the high field regime corresponding to $hbaromega_c gg Delta_{12}$
Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by means of the non-degenerate pump-probe spectroscopy. The exciton dynamics is visualized via the dynamic broadening of the heavy-hole and light-hole exciton resonances caused by the exciton-exciton scattering. Under the non-resonant excitation free carriers are optically generated. In this regime the exciton dynamics is strongly affected by the exciton-carrier scattering. In particular, if the carriers of one sign are prevailing, they efficiently deplete the reservoir of the nonradiative excitons inducing their scattering into the light cone. A simple model of the exciton dynamics is developed, which considers the energy relaxation of photocreated electrons and holes, their coupling into excitons, and exciton scattering into the light cone. The model well reproduces the exciton dynamics observed experimentally both at the resonant and nonresonant excitation. Moreover, it correctly describes the profiles of the photoluminescence pulses studied experimentally. The efficient exciton-electron interaction is further experimentally verified by the control of the exciton density in the reservoir when an additional excitation creates electrons depleting the reservoir.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
