Do you want to publish a course? Click here

Electron-plasmon interaction induced plasmonic-polaron band replication in epitaxial perovskite SrIrO$_3$ films

130   0   0.0 ( 0 )
 Added by Zhengtai Liu
 Publication date 2021
  fields Physics
and research's language is English




Ask ChatGPT about the research

Electron-boson interaction is fundamental to a thorough understanding of various exotic properties emerging in many-body physics. In photoemission spectroscopy, photoelectron emission due to photon absorption would trigger diverse collective excitations in solids, including the emergence of phonons, magnons, electron-hole pairs, and plasmons, which naturally provides a reliable pathway to study electron-boson couplings. While fingerprints of electron-phonon/-magnon interactions in this state-of-the-art technique have been well investigated, much less is known about electron-plasmon coupling, and direct observation of the band renormalization solely due to electron-plasmon interactions is extremely challenging. Here by utilizing integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy, we discover the long sought-after pure electron-plasmon coupling-induced low-lying plasmonic-polaron replica bands in epitaxial semimetallic SrIrO$_3$ films, in which the characteristic low carrier concentration and narrow bandwidth combine to provide a unique platform where the electron-plasmon interaction can be investigated kinematically in photoemission spectroscopy. This finding enriches the forms of electron band normalization on collective modes in solids and demonstrates that, to obtain a complete understanding of the quasiparticle dynamics in 5d electron systems, the electron-plasmon interaction should be considered on equal footing with the acknowledged electron-electron interaction and spin-orbit coupling.

rate research

Read More

The 5$d$ based SrIrO$_3$ represents prototype example of nonmagnetic correlated metal which mainly originates from a combined effect of spin-orbit coupling, lattice dimensionality and crystal structure. Therefore, tuning of these parameters results in diverse physical properties in this material. Here, we study the structural, magnetic and electrical transport behavior in epitaxial SrIrO$_3$ film ($sim$ 40 nm) grown on SrTiO$_3$ substrate. Opposed to bulk material, the SrIrO$_3$ film exhibits a ferromagnetic ordering at low temperature below $sim$ 20 K. The electrical transport data indicate an insulating behavior where the nature of charge transport follows Motts variable-range-hopping model. A positive magnetoresistance is recorded at 2 K which has correlation with magnetic moment. We further observe a nonlinear Hall effect at low temperature ($<$ 20 K) which arises due to an anomalous component of Hall effect. An anisotropic behavior of both magnetoresistance and Hall effect has been evidenced at low temperature which coupled with anomalous Hall effect indicate the development of ferromagnetic ordering. We believe that an enhanced (local) structural distortion caused by lattice strain at low temperatures induces ferromagnetic ordering, thus showing structural instability plays vital role to tune the physical properties in SrIrO$_3$.
The origin of simultaneous electronic, structural and magnetic transitions in bulk rare-earth nickelates ($RE$NiO$_3$) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure engineering of these materials offers unique opportunity to decouple metal-insulator transition (MIT) from the magnetic transition. However, the evolution of underlying electronic properties across these decoupled transitions remains largely unexplored. In order to address this, we have measured Hall effect on a series of epitaxial NdNiO$_3$ films, spanning a variety of electronic and magnetic phases. We find that the MIT results in only partially gapped Fermi surface, whereas full insulating phase forms below the magnetic transition. In addition, we also find a systematic reduction of the Hall coefficient ($R_H$) in the metallic phase of these films with epitaxial strain and also a surprising transition to negative value at large compressive strain. Partially gapped weakly insulating, paramagnetic phase is reminiscence of pseudogap behavior of high $T_c$ cuprates. The precursor metallic phase, which undergoes transition to insulating phase is a non-Fermi liquid with the temperature exponent ($n$) of resistivity of 1, whereas the exponent increases to 4/3 in the non-insulating samples. Such nickelate phase diagram with sign-reversal of $R_H$, pseudo-gap phase and non Fermi liquid behavior are intriguingly similar to high $T_c$ cuprates, giving important guideline to engineer unconventional superconductivity in oxide heterostructure.
Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO$_3$), having a single electron in a $3d$ orbital, is thought to be the simplest example of strongly correlated metallic oxides. Here, we determine the effects of epitaxial strain on the electronic properties of SrVO$_3$ thin films, where the metal-oxide sublattice is corner-connected. Using x-ray absorption and x-ray linear dichroism at the V $L_{2,3}$ and O $K$-edges, it is observed that tensile or compressive epitaxial strain change the hierarchy of orbitals within the $t_{2g}$ and $e_g$ manifolds. Data show a remarkable $2p-3d$ hybridization, as well as a strain-induced reordering of the V $3d$($t_{2g}$, $e_g$) orbitals. The latter is itself accompanied by a consequent change of hybridization that modulates the hybrid $pi^*$ and $sigma^*$ orbitals and the carrier population at the metal ions, challenging a rigid band picture.
Strong spin-orbit coupled 5d transition metal based ABO3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO3. Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO3 thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics.
Perovskite SrRuO$_3$ is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report synthesis and investigation of atomically flat artificial multilayers of SrRuO$_3$ with the spin-orbit semimetal SrIrO$_3$ in combination with band-structure calculations with a Hubbard $U$ term and topological analysis. They reveal an electronic reconstruction and emergence of flat Ru-4d$_{xz}$ bands near the interface, ferromagnetic interlayer coupling and negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall effect and magnetoresistance measurements as a function of the field angle from out of plane towards in-plane orientation (either parallel or perpendicular to the current direction) by a two-channel model. The magnetic easy direction is tilted by about $20^circ$ from the sample normal for low magnetic fields, rotating towards the out-of-plane direction by increasing fields. Fully strained epitaxial growth enables a strong anisotropy of magnetoresistance. An additional Hall effect contribution, not accounted for by the two-channel model is compatible with stable skyrmions only up to a critical angle of roughly $45^circ$ from the sample normal. Within about $20^circ$ from the thin film plane an additional peak-like contribution to the Hall effect suggests the formation of a non-trivial spin structure.
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا