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Register a new userInterplay of anionic quasi-atom and interstitial point defects in electrides: abnormal interstice occupation and colossal charge state of point defects in dense FCC-lithium
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Electrides are an emerging class of materials with highly-localized electrons in the interstices of a crystal that behave as anions. The presence of these unusual interstitial quasi-atom (ISQ) electrons leads to interesting physical and chemical properties, and wide potential applications for this new class of materials. Crystal defects often have a crucial influence on the properties of materials. Introducing impurities has been proved to be an effective approach to improve the properties of a material and to expand its applications. However, the interactions between the anionic ISQs and the crystal defects in electrides are as yet unknown. Here, dense FCC-Li was employed as an archetype to explore the interplay between anionic ISQs and interstitial impurity atoms in this electride. This work reveals a strong coupling among the interstitial impurity atoms, the ISQs, and the matrix Li atoms near to the defects. This complex interplay and interaction mainly manifest as the unexpected tetrahedral interstitial occupation of impurity atoms and the enhancement of electron localization in the interstices. Moreover, the Be impurity occupying the octahedral interstice shows the highest negative charge state (Be8-) discovered thus far. These results demonstrate the rich chemistry and physics of this emerging material, and provide a new basis for enriching their variants for a wide range of applications.
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Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here a comprehensive density functional theory-based investigation of 7 kinds of point defects in a recently produced {gamma} allotrope of 2D phosphorus carbide ({gamma}-PC) is conducted. The defects, such as antisites, single C or P, and double C and P and C and C vacancies, are found to be stable in {gamma}-PC, while the Stone-Wales defect is not presented in {gamma}-PC due to its transition metal dichalcogenides-like structure. The formation energies, stability, and surface density of the considered defect species as well as their influence on the electronic structure of {gamma}-PC is systematically identified. The formation of point defects in {gamma}-PC is found to be less energetically favourable then in graphene, phosphorene, and MoS2. Meanwhile, defects can significantly modulate the electronic structure of {gamma}-PC by inducing hole/electron doping. The predicted scanning tunneling microscopy images suggest that most of the point defects are easy to distinguish from each other and that they can be easily recognized in experiments.
The formation energy and local magnetic moment of a series of point defects in CaB$_6 $ are computed using a supercell approach within the generalized gradient approximation to density functional theory. Based on these results, speculations are made as to the influence of these defects on electrical transport. It is found that the substitution of Ca by La does not lead to the formation of a local moment, while a neutral B$_6 $ vacancy carries a moment of 2.4 Bohr magnetons, mostly distributed over the six nearest-neighbour B atoms. A plausible mechanism for the ferromagnetic ordering of these moments is suggested. Since the same broken B-B bonds appear on the preferred (100) cleavage planes of the CaB$_6$ structure, it is argued that internal surfaces in polycrystals as well as external surfaces in general will make a large contribution to the observed magnetization.
Close-packed chalcogenide spinels, such as MgSc$_2$Se$_4$, MgIn$_2$S$_4$ and MgSc$_2$S$_4$, show potential as solid electrolytes in Mg batteries, but are affected by non-negligible electronic conductivity, which contributes to self-discharge when used in an electrochemical storage device. Using first-principles calculations, we evaluate the energy of point defects as function of synthesis conditions and Fermi level to identify the origins of the undesired electronic conductivity. Our results suggest that Mg-vacancies and Mg-metal anti-sites (where Mg is exchanged with Sc or In) are the dominant point defects that can occur in the systems under consideration. While we find anion-excess conditions and slow cooling to likely create conditions for low electronic conductivity, the spinels are likely to exhibit significant $n$-type conductivity under anion-poor environments, which are often present during high temperature synthesis. Finally, we explore extrinsic aliovalent doping to potentially mitigate the electronic conductivity in these chalcogenide spinels. The computational strategy is general and can be easily extended to other solid electrolytes (and electrodes) to aid in the optimization of the electronic properties of the corresponding frameworks.
Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental study of photoluminescence spectra of defects in diamond and SiC, aimed at assessing the validity of theoretical and numerical approximations used in first principles calculations, including the use of the Franck-Condon principle and the displaced harmonic oscillator approximation. We focus on prototypical examples of solid-state qubits, the divacancy centers in SiC and the nitrogen-vacancy in diamond, and we report computed photoluminescence spectra as a function of temperature that are in very good agreement with the measured ones. As expected we find that the use of hybrid functionals leads to more accurate results than semilocal functionals. Interestingly our calculations show that constrained density functional theory (CDFT) and time-dependent hybrid DFT perform equally well in describing the excited state potential energy surface of triplet states; our findings indicate that CDFT, a relatively cheap computational approach, is sufficiently accurate for the calculations of photoluminescence spectra of the defects studied here. Finally, we find that only by correcting for finite-size effects and extrapolating to the dilute limit, one can obtain a good agreement between theory and experiment. Our results provide a detailed validation protocol of first principles calculations of photoluminescence spectra, necessary both for the interpretation of experiments and for robust predictions of the electronic properties of point defects in semiconductors.
We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to room-temperature D2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations is 0.5 eV in agreement with the experiment. Our di-interstitial model establishes a link between point defects and extended defects, di-interstitials providing the nuclei for the growth.
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