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Register a new userRobust wavefront dislocations of Friedel oscillations in gapped graphene
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Friedel oscillation is a well-known wave phenomenon, which represents the oscillatory response of electron waves to imperfection. By utilizing the pseudospin-momentum locking in gapless graphene, two recent experiments demonstrate the measurement of the topological Berry phase by corresponding to the unique number of wavefront dislocations in Friedel oscillations. Here, we study the Friedel oscillations in gapped graphene, in which the pseudospin-momentum locking is broken. Unusually, the wavefront dislocations do occur as that in gapless graphene, which expects the immediate verification in the current experimental condition. The number of wavefront dislocations is ascribed to the invariant pseudospin winding number in gaped and gapless graphene. This study deepens the understanding of correspondence between topological quantity and wavefront dislocations in Friedel oscillations, and implies the possibility to observe the wavefront dislocations of Friedel oscillations in intrinsic gapped two-dimensional materials, e.g., transition metal dichalcogenides.
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Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore of crucial importance for technological applications. While the spectral distribution in energy bands is routinely measured by various techniques, it is more difficult to access the topological properties of band structures such as the Berry phase {gamma}. It is usually thought that measuring the Berry phase requires applying external electromagnetic forces because these allow realizing the adiabatic transport on closed trajectories along which quantum mechanical wave-functions pick up the Berry phase. In graphene, the anomalous quantum Hall effect results from the Berry phase {gamma} = {pi} picked up by massless relativistic electrons along cyclotron orbits and proves the existence of Dirac cones. Contradicting this belief, we demonstrate that the Berry phase of graphene can be measured in absence of any external magnetic field. We observe edge dislocations in the Friedel oscillations formed at hydrogen atoms chemisorbed on graphene. Following Nye and Berry in describing these topological defects as phase singularities of complex fields, we show that the number of additional wave-fronts in the dislocation is a real space measurement of the pseudo spin winding, i.e. graphenes Berry phase. Since the electronic dispersion can also be retrieved from Friedel oscillations, our study establishes the electronic density as a powerful observable to determine both the dispersion relation and topological properties of wavefunctions. This could have profound consequences for the study of the band-structure topology of relativistic and gapped phases in solids.
Two opposite chiralities of Dirac electrons in a 2D graphene sheet modify the Friedel oscillations strongly: electrostatic potential around an impurity in graphene decays much faster than in 2D electron gas. At distances $r$ much larger than the de Broglie wavelength, it decays as $1/r^3$. Here we show that a weak uniform magnetic field affects the Friedel oscillations in an anomalous way. It creates a field-dependent contribution which is {em dominant} in a parametrically large spatial interval $p_0^{-1}lesssim rlesssim k_Fl^2$, where $l$ is the magnetic length, $k_F$ is Fermi momentum and $p_0^{-1}=(k_Fl)^{4/3}/k_F$. Moreover, in this interval, the field-dependent oscillations do not decay with distance. The effect originates from a spin-dependent magnetic phase accumulated by the electron propagator. The obtained phase may give rise to novel interaction effects in transport and thermodynamic characteristics of graphene and graphene-based heterostructures.
In this paper, the electronic band structures and its transport properties in the gapped graphene superlattices, with one-dimensional (1D) periodic potentials of square barriers, are systematically investigated. It is found that a zero averaged wave-number (zero-$overline{k}$ ) gap is formed inside the gapped graphene-based superlattices, and the condition for obtaining such a zero-$overline{k}$ gap is analytically presented. The properties of this zero-$overline{k}$ gap including its transmission, conductance and Fano factor are studied in detail. Finally it is revealed that the properties of the electronic transmission, conductance and Fano factor near the zero-$overline{k}$ gap are very insensitive to the structural disorder for the finite graphene-based periodic-barrier systems.
The Lindhard function represents the basic building block of many-body physics and accounts for charge response, plasmons, screening, Friedel oscillation, RKKY interaction etc. Here we study its non-Hermitian version in one dimension, where quantum effects are traditionally enhanced due to spatial confinement, and analyze its behavior in various limits of interest. Most importantly, we find that the static limit of the non-Hermitian Lindhard function has no divergence at twice the Fermi wavenumber and vanishes identically for all other wavenumbers at zero temperature. Consequently, no Friedel oscillations are induced by a non-Hermitian, imaginary impurity to lowest order in the impurity potential at zero temperature. Our findings are corroborated numerically on a tight-binding ring by switching on a weak real or imaginary potential. We identify conventional Friedel oscillations or heavily suppressed density response, respectively.
By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit interaction (SOI), we show that the interplay of different SOI mechanisms induces highly anisotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly-singular behavior, which leads to an intriguing novel phenomenon, beating of Friedel oscillations. This effect is a general feature of systems with BR+D SOI and should be observed in structures with a sufficiently strong SOI.
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