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Register a new userRobust zero-averaged wave-number gap inside gapped graphene superlattices
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In this paper, the electronic band structures and its transport properties in the gapped graphene superlattices, with one-dimensional (1D) periodic potentials of square barriers, are systematically investigated. It is found that a zero averaged wave-number (zero-$overline{k}$ ) gap is formed inside the gapped graphene-based superlattices, and the condition for obtaining such a zero-$overline{k}$ gap is analytically presented. The properties of this zero-$overline{k}$ gap including its transmission, conductance and Fano factor are studied in detail. Finally it is revealed that the properties of the electronic transmission, conductance and Fano factor near the zero-$overline{k}$ gap are very insensitive to the structural disorder for the finite graphene-based periodic-barrier systems.
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Friedel oscillation is a well-known wave phenomenon, which represents the oscillatory response of electron waves to imperfection. By utilizing the pseudospin-momentum locking in gapless graphene, two recent experiments demonstrate the measurement of the topological Berry phase by corresponding to the unique number of wavefront dislocations in Friedel oscillations. Here, we study the Friedel oscillations in gapped graphene, in which the pseudospin-momentum locking is broken. Unusually, the wavefront dislocations do occur as that in gapless graphene, which expects the immediate verification in the current experimental condition. The number of wavefront dislocations is ascribed to the invariant pseudospin winding number in gaped and gapless graphene. This study deepens the understanding of correspondence between topological quantity and wavefront dislocations in Friedel oscillations, and implies the possibility to observe the wavefront dislocations of Friedel oscillations in intrinsic gapped two-dimensional materials, e.g., transition metal dichalcogenides.
One-dimensional (1D) graphene superlattices have been predicted to exhibit zero-energy modes a decade ago, but an experimental proof has remained missing. Motivated by a recent experiment that could possibly shed light on this, here we perform quantum transport simulations for 1D graphene superlattices, considering electrostatically simulated potential profiles as realistic as possible. Combined with the analysis on the corresponding miniband structures, we find that the zero modes generated by the 1D superlattice potential can be further cloned to higher energies, which are also accessible by tuning the average density. Our multiterminal transverse magnetic focusing simulations further reveal the modulation-controllable ballistic miniband transport for 1D graphene superlattices. A simple idea for creating a perfectly symmetric periodic potential with strong modulation is proposed at the end of this work, generating well aligned zero modes up to 6 within a reasonable gate strength.
We combined periodic ripples and electrostatic potentials to form curved graphene superlattices and studied the effects of space-dependent Fermi velocity induced from curvature on their electronic properties. With equal periods and symmetric potentials, the Dirac points do not move, but their locations shift under asymmetric potentials. This shift can be tuned by curvature and potentials. Tunable extra gaps in band structures can appear with unequal periods. The existence of new Dirac points is proposed, such that these new Dirac points can appear under smaller potentials with curvature, and their locations can be changed even under a fixed potential by adjusting the curvature. Our results suggest that curvature provides a new possible dimension to tune the electronic properties in graphene superlattices and a platform to more easier study physics near new Dirac points.
High mobility single and few-layer graphene sheets are in many ways attractive as nanoelectronic circuit hosts but lack energy gaps, which are essential to the operation of field-effect transistors. One of the methods used to create gaps in the spectrum of graphene systems is to form long period moire patterns by aligning the graphene and hexagonal boron nitride (h-BN) substrate lattices. Here, we use planar tunneling devices with thin h-BN barriers to obtain direct and accurate tunneling spectroscopy measurements of the energy gaps in single- and bi-layer graphene-h-BN superlattice structures at charge neutrality (first Dirac point) and at integer moire band occupancies (second Dirac point, SDP) as a function of external electric and magnetic fields and the interface twist angle. In single-layer graphene we find, in agreement with previous work, that gaps are formed at neutrality and at the hole-doped SDP, but not at the electron-doped SDP. Both primary and secondary gaps can be determined accurately by extrapolating Landau fan patterns to zero magnetic field and are as large as $simeq$ 17 meV for devices in near perfect alignment. For bilayer graphene, we find that gaps occur only at charge neutrality where they can be modified by an external electric field. Tunneling signatures of in-gap states around neutrality suggest the development of edge modes related to topologically non-trivial valley projected bands due to the combination of an external electric field and moire superlattice patterns.
We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$Omega$s in the high carrier density regime to several M$Omega$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $ u=2$ followed by $ u=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system.
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