No Arabic abstract
By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit interaction (SOI), we show that the interplay of different SOI mechanisms induces highly anisotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly-singular behavior, which leads to an intriguing novel phenomenon, beating of Friedel oscillations. This effect is a general feature of systems with BR+D SOI and should be observed in structures with a sufficiently strong SOI.
Effects associated with the interference of electron waves around a magnetic point defect in two-dimensional electron gas with combined Rashba-Dresselhaus spin-orbit interaction in the presence of a parallel magnetic field are theoretically investigated. The effect of a magnetic field on the anisotropic spatial distribution of the local density of states and the local density of magnetization is analyzed. The existence of oscillations of the density of magnetization with scattering by a non-magnetic defect and the contribution of magnetic scattering (accompanied by spin-flip) in the local density of electron states are predicted.
Spin-orbit qubit (SOQ) is the dressed spin by the orbital degree of freedom through a strong spin-orbit coupling. We show that Coulomb interaction between two electrons in quantum dots located separately in two nanowires can efficiently induce quantum entanglement between two SOQs. The physical mechanism to achieve such quantum entanglement is based on the feasibility of the SOQ responding to the external electric field via an intrinsic electric dipole spin resonance.
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
When a local and attractive potential is quenched in a nanowire, the spectrum changes its topology from a purely continuum to a continuum and discrete portion. We show that, under appropriate conditions, this quench leads to stable coherent oscillations in the observables time evolution. In particular, we demonstrate that ballistic nanowires with spin-orbit coupling (SOC) exposed to a uniform magnetic field are especially suitable to observe this effect. Indeed, while in ordinary nanowires the effect occurs only if the strength $U_0$ of the attractive potential is sufficiently strong, even a weak value of $U_0$ is sufficient in SOC nanowires. Furthermore, in these systems coherent oscillations in the spin sector can be generated and controlled electrically by quenching the gate voltage acting on the charge sector. We interpret the origin of this phenomenon, analyze the effect of variation of the chemical potential and the switching time of the quenched attractive potential, and address possible implementation schemes.
It is a common perception that the transport of a spin current in polycrystalline metal is isotropic and independent of the polarization direction, even though spin current is a tensorlike quantity and its polarization direction is a key variable. We demonstrate surprising anisotropic spin relaxation in mesoscopic polycrystalline Cu channels in nonlocal spin valves. For directions in the substrate plane, the spin-relaxation length is longer for spins parallel to the Cu channel than for spins perpendicular to it, by as much as 9% at 10 K. Spin-orbit effects on the surfaces of Cu channels can account for this anisotropic spin relaxation. The finding suggests novel tunability of spin current, not only by its polarization direction but also by electrostatic gating.