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Register a new userRecent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
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As Moores law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sensors, microwave generators and neuromorphic computing networks. The emergence of two-dimensional (2D) materials brings opportunities for MTJs based on 2D materials which have many attractive characters and advantages. Especially, the recently discovered intrinsic 2D ferromagnetic materials with high spin-polarization hold the promise for next-generation nanoscale MTJs. With the development of advanced 2D materials, many efforts on MTJs with 2D materials have been made both theoretically and experimentally. Various 2D materials, such as semi-metallic graphene, insulating h-BN, semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2 and some other recently emerged 2D materials are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs, and review the current progress made with 2D MTJs, briefly comment on work with some specific 2D materials, and highlight how they address the current challenges in MTJs, and finally offer an outlook and perspective of 2D MTJs.
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The C2DB is a highly curated open database organizing a wealth of computed properties for more than 4000 atomically thin two-dimensional (2D) materials. Here we report on new materials and properties that were added to the database since its first release in 2018. The set of new materials comprise several hundred monolayers exfoliated from experimentally known layered bulk materials, (homo)bilayers in various stacking configurations, native point defects in semiconducting monolayers, and chalcogen/halogen Janus monolayers. The new properties include exfoliation energies, Bader charges, spontaneous polarisations, Born charges, infrared polarisabilities, piezoelectric tensors, band topology invariants, exchange couplings, Raman- and second harmonic generation spectra. We also describe refinements of the employed material classification schemes, upgrades of the computational methodologies used for property evaluations, as well as significant enhancements of the data documentation and provenance. Finally, we explore the performance of Gaussian process-based regression for efficient prediction of mechanical and electronic materials properties. The combination of open access, detailed documentation, and extremely rich materials property data sets make the C2DB a unique resource that will advance the science of atomically thin materials.
Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary to this, no such problem arises in giant magnetoresistance elements. Moreover, based on an a priori understanding of the electronic structure, we propose an antiferromagnetically coupled TMR element, in which interface states are eliminated, as a paradigm of materials design from first principles. Our conclusions are supported by ab-initio calculations.
Magnesium hydride owns the largest share of publications on solid materials for hydrogen storage. The Magnesium group of international experts contributing to IEA Task 32 Hydrogen Based Energy Storage recently published two review papers presenting the activities of the group focused on magnesium hydride based materials and on Mg based compounds for hydrogen and energy storage. This review article not only overviews the latest activities on both fundamental aspects of Mg-based hydrides and their applications, but also presents a historic overview on the topic and outlines projected future developments. Particular attention is paid to the theoretical and experimental studies of Mg-H system at extreme pressures, kinetics and thermodynamics of the systems based on MgH2,nanostructuring, new Mg-based compounds and novel composites, and catalysis in the Mg based H storage systems. Finally, thermal energy storage and upscaled H storage systems accommodating MgH2 are presented.
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is particularly undesirable for magnetic random access memory applications where the free layer can exhibit bias. Using atomistic dipole-dipole calculations we numerically simulate the stray magnetic field emanating from the magnetic layers of a magnetic memory device with different geometries. We find that edge effects dominate the overall stray magnetic field in patterned devices and that a conventional synthetic antiferromagnet structure is only partially able to compensate the field at the free layer position. A granular reference layer is seen to provide near-field flux closure while additional patterning defects add significant complexity to the stray field in nanoscale devices. Finally we find that the stray field from a nanoscale antiferromagnet is surprisingly non-zero arising from the imperfect cancellation of magnetic sublattices due to edge defects. Our findings provide an outline of the role of different layer structures and defects in the effective stray magnetic field in nanoscale magnetic random access memory devices and atomistic calculations provide a useful tools to study the stray field effects arising from a wide range of defects.
The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that all can be controlled and modulated through electrical means has given rise to many device applications. In addition, these materials exhibit both room-temperature spin and valley polarization, magnetism, superconductivity, piezoelectricity that are intricately dependent on the composition, crystal structure, stacking, twist angle, layer number and phases of these materials. Initial results on graphene exfoliated from single bulk crystals motivated the development of wide-area, high purity synthesis and heterojunctions with atomically clean interfaces. Now by opening this design space to new synthetic two-dimensional materials beyond graphene, it is possible to explore uncharted opportunities in designing novel heterostructures for electrical tunable devices. To fully reveal the emerging functionalities and opportunities of these atomically thin materials in practical applications, this review highlights several representative and noteworthy research directions in the use of electrical means to tune these aforementioned physical and structural properties, with an emphasis on discussing major applications of beyond graphene 2D materials in tunable devices in the past few years and an outlook of what is to come in the next decade.
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