No Arabic abstract
Nonlinear frequency conversion is ubiquitous in laser engineering and quantum information technology. A long-standing goal in photonics is to integrate on-chip semiconductor laser sources with nonlinear optical components. Engineering waveguide lasers with spectra that phase-match to nonlinear processes on the same device is a formidable challenge. Here, we demonstrate difference-frequency generation in an AlGaAs Bragg reflection waveguide which incorporates the gain medium for the pump laser in its core. We include quantum dot layers in the AlGaAs waveguide that generate electrically driven laser light at ~790 nm, and engineer the structure to facilitate nonlinear processes at this wavelength. We perform difference-frequency generation between 1540 nm and 1630 nm using the on-chip laser, which is enabled by the broad modal phase-matching of the AlGaAs waveguide, and measure normalized conversion efficiencies up to $(0.64pm0.21)$ %/W/cm$^2$. Our work demonstrates a pathway towards devices that utilize on-chip active elements and strong optical nonlinearities to enable highly integrated photonic systems-on-chip.
We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of SF pulses with increasing amplitude of injected current pulses and attribute it to cooperative pairing of electron-hole (e-h) radiative recombinations. The phase transitions from amplified spontaneous emission to superfluorescence and then to lasing regime is confirmed by observing (i) abrupt peak power growth accompanied by spectral broadening, (ii) spectral shape with hyperbolic secant envelope and (iii) red shift of central wavelength of SF emission pulse. The observed red shift of SF emission is shown to be caused by the pairing of e-h pairs in an indirect cooperative X-transition.
Exciton-polaritons are mixed light-matter particles offering a versatile solid state platform to study many-body physical effects. In this work we demonstrate an electrically controlled polariton laser, in a compact, easy-to-fabricate and integrable configuration, based on a semiconductor waveguide. Interestingly, we show that polariton lasing can be achieved in a system without a global minimum in the polariton energy-momentum dispersion. The surface cavity modes for the laser emission are obtained by adding couples of specifically designed diffraction gratings on top of the planar waveguide, forming an in-plane Fabry-Perot cavity. It is thanks to the waveguide geometry, that we can apply a transverse electric field in order to finely tune the laser energy and quality factor of the cavity modes. Remarkably, we exploit the system sensitivity to the applied electric field to achieve an electrically controlled population of coherent polaritons. The precise control that can be reached with the manipulation of the grating properties and of the electric field provides strong advantages to this device in terms of miniaturization and integrability, two main features for the future development of coherent sources from polaritonic technologies.
The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersubband gain medium, self-lock the optical modes in phase, allowing stable comb operation, albeit over a restricted dynamic range (~ 20% of the laser operational range). Here, we engineer miniaturized THz FCSs comprising a heterogeneous THz QCL integrated with a tightly-coupled on-chip solution-processed graphene saturable-absorber reflector that preserves phase-coherence between lasing modes even when four-wave mixing no longer provides dispersion compensation. This enables a high-power (8 mW) FCS with over 90 optical modes to be demonstrated, over more than 55% of the laser operational range. Furthermore, stable injection-locking is showed, paving the way to impact a number of key applications, including high-precision tuneable broadband-spectroscopy and quantum-metrology.
We describe a coherent mid-infrared continuum source with 700 cm-1 usable bandwidth, readily tuned within 600 - 2500 cm-1 (4 - 17 mum) and thus covering much of the infrared fingerprint molecular vibration region. It is based on nonlinear frequency conversion in GaSe using a compact commercial 100-fs-pulsed Er fiber laser system providing two amplified near-infrared beams, one of them broadened by a nonlinear optical fiber. The resulting collimated mid-infrared continuum beam of 1 mW quasi-cw power represents a coherent infrared frequency comb with zero carrier-envelope phase, containing about 500,000 modes that are exact multiples of the pulse repetition rate of 40 MHz. The beams diffraction-limited performance enables long-distance spectroscopic probing as well as maximal focusability for classical and ultraresolving near-field microscopies. Applications are foreseen also in studies of transient chemical phenomena even at ultrafast pump-probe scale, and in high-resolution gas spectroscopy for e.g. breath analysis.
Semiconductor lasers capable of generating a vortex beam with a specific orbital angular momentum (OAM) order are highly attractive for applications ranging from nanoparticle manipulation, imaging and microscopy to fibre and quantum communications. In this work, an electrically pumped OAM laser operating at telecom wavelengths is fabricated by monolithically integrating an optical vortex emitter with a distributed feedback (DFB) laser on the same InGaAsP/InP epitaxial wafer. A single-step dry etching process is adopted to complete the OAM emitter, equipped with specially designed top gratings. The vortex beam emitted by the integrated laser is captured, and its OAM mode purity characterized. The electrically pumped OAM laser eliminates the external laser required by silicon- or silicon-on-insulator (SOI)-based OAM emitters, thus demonstrating great potential for applications in communication systems and quantum domain.