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Register a new userOptical phonon contribution to the thermal conductivity of a quantum paraelectric
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Motivated by recent experimental findings, we study the contribution of a quantum critical optical phonon branch to the thermal conductivity of a paraelectric system. We consider the proximity of the optical phonon branch to transverse acoustic phonon branch and calculate its contribution to the thermal conductivity within the Kubo formalism. We find a low temperature power law dependence of the thermal conductivity as $T^{alpha}$, with $1 < alpha < 2$, (lower than $T^3$ behavior) due to optical phonons near the quantum critical point. This result is in accord with the experimental findings and indicates the importance of quantum fluctuations in the thermal conduction in these materials.
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Recent studies reveal that four-phonon scattering is generally important in determining thermal conductivities of solids. However, these studies have been focused on materials where thermal conductivity $kappa$ is dominated by acoustic phonons, and the impact of four phonon scattering, although significant, is still generally smaller than three-phonon scattering. In this work, taking AlSb as example, we demonstrated that four-phonon scattering is even more critical to three-phonon scattering as it diminishes optical phonon thermal transport, and therefore significantly reduces the thermal conductivities of materials in which optical branches have long three-phonon lifetimes. Also, our calculations show that four-phonon scattering can play an extremely important role in weakening the isotope effect on $kappa$. Specifically, four-phonon scattering reduces the room-temperature $kappa$ of the isotopically pure and natural-occurring AlSb by 70$%$ and 50$%$, respectively. The reduction for isotopically pure and natural-occurring c-GaN is about 34$%$ and 27$%$, respectively. For isotopically-pure w-GaN, the reduction is about 13$%$ at room temperature and 25$%$ at 400 K. These results provided important guidance for experimentalists for achieving high thermal conductivities in III-V compounds for applications in semiconductor industry.
It has been known for decades that thermal conductivity of insulating crystals becomes proportional to the inverse of temperature when the latter is comparable to or higher than the Debye temperature. This behavior has been understood as resulting from Umklapp scattering among phonons. We put under scrutiny the magnitude of the thermal diffusion constant in this regime and find that it does not fall below a threshold set by the square of sound velocity times the Planckian time ($tau_p=hbar/k_BT$). The conclusion, based on scrutinizing the ratio in cubic crystals with high thermal resistivity, appears to hold even in glasses where Umklapp events are not conceivable. Explaining this boundary, reminiscent of a recently-noticed limit for charge transport in metals, is a challenge to theory.
Allotropes of carbon, such as diamond and graphene, are among the best conductors of heat. We monitored the evolution of thermal conductivity in thin graphite as a function of temperature and thickness and found an intimate link between high conductivity, thickness, and phonon hydrodynamics. The room temperature in-plane thermal conductivity of 8.5-micrometer-thick graphite was 4300 watts per meter-kelvin-a value well above that for diamond and slightly larger than in isotopically purified graphene. Warming enhances thermal diffusivity across a wide temperature range, supporting partially hydrodynamic phonon flow. The enhancement of thermal conductivity that we observed with decreasing thickness points to a correlation between the out-of-plane momentum of phonons and the fraction of momentum relaxing collisions. We argue that this is due to the extreme phonon dispersion anisotropy in graphite.
Bulk gallium oxide (Ga2O3) has been widely used in lasers, dielectric coatings for solar cells, deep-ultraviolet transistor applications due to the large band gap over 4.5 eV. With the miniaturization of electronic devices, atomically thin Ga2O3 monolayer has been unveiled recently, which features an asymmetric configuration with a quintuple-layer atomic structure. The superior stability, the strain-tunable electronic properties, high carrier mobility and optical absorption indicate the promising applications in the electronic and photoelectronic devices. However, the strict investigation of lattice thermal conductivity (kappa_L) of 2D Ga2O3 is still lacking, which has impeded the widespread use in practical applications. Here, we report the computational discovery of low kappa_L with a value of 10.28 W m-1 K-1 at 300 K in atomically thin Ga2O3. Unexpectedly, two quasi-acoustic shear phonon modes contribute as high as 27% to the kappa_L at 300 K, leading to 37% contribution of optical phonon modes, much larger than many other 2D materials. We also find that the quasi-acoustic shear mode can emerge in the system without van der Waals interactions. This work provides new insight into the nature of thermal transport in non-van der Waals monolayer materials and predicts a new low kappa_L material of potential interest for thermal insulation in transistor applications.
It is well known that conductivity of disordered metals is suppressed in the limit of low frequencies and temperatures by quantum corrections. Although predicted by theory to exist up to much higher energies, such corrections have so far been experimentally proven only for $lesssim$80 meV. Here, by a combination of transport and optical studies, we demonstrate that the quantum corrections are present in strongly disordered conductor MoC up to at least $sim$4 eV, thereby extending the experimental window where such corrections were found by a factor of 50. The knowledge of both, the real and imaginary parts of conductivity, enables us to identify the microscopic parameters of the conduction electron fluid. We find that the conduction electron density of strongly disordered MoC is surprisingly high and we argue that this should be considered a generic property of metals on the verge of disorder-induced localization transition.
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