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Register a new userAnomalous Hall effect in weak-itinerant ferrimagnet FeCr$_2$Te$_4$
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We carried out a comprehensive study of electronic transport, thermal and thermodynamic properties in FeCr$_2$Te$_4$ single crystals. It exhibits bad-metallic behavior and anomalous Hall effect (AHE) below a weak-itinerant paramagentic-to-ferrimagnetic transition $T_c$ $sim$ 123 K. The linear scaling between the anomalous Hall resistivity $rho_{xy}$ and the longitudinal resistivity $rho_{xx}$ implies that the AHE in FeCr$_2$Te$_4$ is most likely dominated by extrinsic skew-scattering mechanism rather than intrinsic KL or extrinsic side-jump mechanism, which is supported by our Berry phase calculations.
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The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi$_2$Te$_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi$_2$Te$_4$ films, rendering them attractive for technological innovations.
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of MnBi$_2$Te$_4$ and Sb$_2$Te$_3$ layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-temperature QAHE. We find that interlayer ferromagnetic transition can happen at $T_{rm C}=42~rm K$ when a five-quintuple-layer Sb$_2$Te$_3$ topological insulator is inserted into two septuple-layer MnBi$_2$Te$_4$ with interlayer antiferromagnetic coupling. Band structure and topological property calculations show that MnBi$_2$Te$_4$/Sb$_2$Te$_3$/MnBi$_2$Te$_4$ heterostructure exhibits a topologically nontrivial band gap around 26 meV, that hosts a QAHE with a Chern number of $mathcal{C}=1$. In addition, our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to the fact of natural charge-compensation, originating from the intrinsic n-type defects in MnBi$_2$Te$_4$ and p-type defects in Sb$_2$Te$_3$.
We present magnetotransport data on the ferrimagnet GdMn$_6$Sn$_6$. From the temperature dependent data we are able to extract a large instrinsic contribution to the anomalous Hall effect $sigma_{xz}^{int} sim$ 32 $Omega^{-1}cm^{-1}$ and $sigma_{xy}^{int} sim$ 223 $Omega^{-1}cm^{-1}$, which is comparable to values found in other systems also containing kagome nets of transition metals. From our transport anisotropy, as well as our density functional theory calculations, we argue that the system is electronically best described as a three dimensional system. Thus, we show that reduced dimensionality is not a strong requirement for obtaining large Berry phase contributions to transport properties. In addition, the coexistence of rare-earth and transition metal magnetism makes the hexagonal MgFe$_6$Ge$_6$ structure type a promising system to tune the electronic and magnetic properties in future studies.
We report the observation of anomalous Hall resistivity in single crystals of EuAl$_4$, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at $T_mathrm{N} sim 15.6$ K and $T_mathrm{CDW} sim 140$ K, respectively. In the AFM state, when the magnetic field is applied along the $c$-axis direction, EuAl$_4$ undergoes a series of metamagnetic transitions. Within this field range, we observe a clear hump-like anomaly in the Hall resistivity, representing part of the anomalous Hall resistivity. By considering different scenarios, we conclude that such a hump-like feature is most likely a manifestation of the topological Hall effect, normally occurring in noncentrosymmetric materials known to host nontrivial topological spin textures. In view of this, EuAl$_4$ would represent a rare case where the topological Hall effect not only arises in a centrosymmetric structure, but it also coexists with CDW order.
The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the $sim 10$ meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr{o}dinger-Poisson self-consistent-field equations.
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