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Register a new userCurrent-induced magnetization switching in a chemically disordered A1 CoPt single layer
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We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1 Co1-xPtx single layers, which allows to fabricate perpendicularly magnetized CoPt single layer with composition gradient to break the inversion symmetry of the structure. By fabricating the gradient CoPt single layer, we have evaluated the SOT efficiency and successfully realized the SOT-induced magnetization switching. Our study provides an approach to realize the current-induced magnetization in the ferromagnetic single layers without attaching SOT source materials.
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We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see.
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit torque (SOT) switching of the magnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy, where the switching is detected by spin Hall magnetoresistance. Reversible switching is found at room temperature for a threshold current density of 10^7 A cm^-2. The YIG sublattices with antiparallel and unequal magnetic moments are aligned parallel or antiparallel to the direction of current pulses, which is consistent to the Neel order switching in antiferromagnetic system. It is proposed that such a switching behavior may be triggered by the antidamping-torque acting on the two antiparallel sublattices of FiMI. Our finding not only broadens the magnetization switching by electrical means and promotes the understanding of magnetization switching, but also paves the way for all-electrically modulated microwave devices and spin caloritronics with low power consumption.
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An inverse CIMS behavior is also observed when the thickness of the free layer increases.
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